Medium current plastic encapsulated Zener diode CBI BZT52C36S with planar die and lead free design
Key Attributes
Model Number:
BZT52C36S
Product Custom Attributes
Impedance(Zzt):
90Ω
Diode Configuration:
Independent
Zener Voltage(Range):
34V~38V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
36V
Impedance(Zzk):
350Ω
Mfr. Part #:
BZT52C36S
Package:
SOD-323
Product Description
Product Overview
The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general purpose, medium current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.
Product Attributes
- Package Type: SOD-323
- Construction: Planar die
- Power Dissipation: 200mW on ceramic PCB
- Assembly: Ideally suited for automated assembly processes
- Availability: Lead-free version
Technical Specifications
| Model | Marking | Nominal Zener Voltage (V) VZ @ IZT | Test Current (mA) IZT | Max. Zener Impedance () ZZT @ IZK | Max. Reverse Current (A) IR @ VR | Forward Voltage (V) VF @ IF = 10mA | Power Dissipation (mW) PD | Typical Temp. Coefficient (mV/C) VZ @ IZTC |
|---|---|---|---|---|---|---|---|---|
| BZT52C2V4S | WX | 2.4 | 5 | 600 @ 1.0mA | 50 @ 1.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C2V7S | W1 | 2.7 | 5 | 600 @ 1.0mA | 20 @ 1.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C3V0S | W2 | 3.0 | 5 | 600 @ 1.0mA | 10 @ 1.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C3V3S | W3 | 3.3 | 5 | 600 @ 1.0mA | 5 @ 1.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C3V6S | W4 | 3.6 | 5 | 600 @ 1.0mA | 5 @ 1.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C3V9S | W5 | 3.9 | 5 | 600 @ 1.0mA | 3 @ 1.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C4V3S | W6 | 4.3 | 5 | 600 @ 1.0mA | 3 @ 1.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C4V7S | W7 | 4.7 | 5 | 500 @ 1.0mA | 3 @ 2.0V | 0.9 | 200 | -3.5 @ 5mA |
| BZT52C5V1S | W8 | 5.1 | 5 | 480 @ 1.0mA | 2 @ 2.0V | 0.9 | 200 | -2.7 @ 5mA |
| BZT52C5V6S | W9 | 5.6 | 5 | 400 @ 1.0mA | 1 @ 2.0V | 0.9 | 200 | -2 @ 5mA |
| BZT52C6V2S | WA | 6.2 | 5 | 150 @ 1.0mA | 3 @ 4.0V | 0.9 | 200 | 0.4 @ 5mA |
| BZT52C6V8S | WB | 6.8 | 5 | 80 @ 1.0mA | 2 @ 4.0V | 0.9 | 200 | 1.2 @ 5mA |
| BZT52C7V5S | WC | 7.5 | 5 | 80 @ 1.0mA | 1 @ 5.0V | 0.9 | 200 | 2.5 @ 5mA |
| BZT52C8V2S | WD | 8.2 | 5 | 80 @ 1.0mA | 0.7 @ 5.0V | 0.9 | 200 | 3.2 @ 5mA |
| BZT52C9V1S | WE | 9.1 | 5 | 100 @ 1.0mA | 0.5 @ 6.0V | 0.9 | 200 | 3.8 @ 5mA |
| BZT52C10S | WF | 10 | 5 | 150 @ 1.0mA | 0.2 @ 7.0V | 0.9 | 200 | 4.5 @ 5mA |
| BZT52C11S | WG | 11 | 5 | 150 @ 1.0mA | 0.1 @ 8.0V | 0.9 | 200 | 5.4 @ 5mA |
| BZT52C12S | WH | 12 | 5 | 150 @ 1.0mA | 0.1 @ 8.0V | 0.9 | 200 | 6.0 @ 5mA |
| BZT52C13S | WI | 13 | 5 | 170 @ 1.0mA | 0.1 @ 8.0V | 0.9 | 200 | 7.0 @ 5mA |
| BZT52C15S | WJ | 15 | 5 | 200 @ 1.0mA | 0.1 @ 10.5V | 0.9 | 200 | 9.2 @ 5mA |
| BZT52C16S | WK | 16 | 5 | 200 @ 1.0mA | 0.1 @ 11.2V | 0.9 | 200 | 10.4 @ 5mA |
| BZT52C18S | WL | 18 | 5 | 225 @ 1.0mA | 0.1 @ 12.6V | 0.9 | 200 | 12.4 @ 5mA |
| BZT52C20S | WM | 20 | 5 | 225 @ 1.0mA | 0.1 @ 14.0V | 0.9 | 200 | 14.4 @ 5mA |
| BZT52C22S | WN | 22 | 5 | 250 @ 1.0mA | 0.1 @ 15.4V | 0.9 | 200 | 16.4 @ 5mA |
| BZT52C24S | WO | 24 | 5 | 250 @ 1.0mA | 0.1 @ 16.8V | 0.9 | 200 | 18.4 @ 5mA |
| BZT52C27S | WP | 27 | 2 | 300 @ 0.5mA | 0.1 @ 18.9V | 0.9 | 200 | 21.4 @ 2mA |
| BZT52C30S | WQ | 30 | 2 | 300 @ 0.5mA | 0.1 @ 21.0V | 0.9 | 200 | 24.4 @ 2mA |
| BZT52C33S | WR | 33 | 2 | 325 @ 0.5mA | 0.1 @ 23.1V | 0.9 | 200 | 27.4 @ 2mA |
| BZT52C36S | WS | 36 | 2 | 350 @ 0.5mA | 0.1 @ 25.2V | 0.9 | 200 | 30.4 @ 2mA |
| BZT52C39S | WT | 39 | 2 | 350 @ 0.5mA | 0.1 @ 27.3V | 0.9 | 200 | 33.4 @ 2mA |
Notes:
- 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
- 2. Short duration test pulse used to minimize self-heating effect.
- 3. f = 1kHz.
2410121326_CBI-BZT52C36S_C2886381.pdf
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