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quality Plastic encapsulated Zener diode CBI BZT52C27S with medium current rating and 150 degree junction temperature factory
quality Plastic encapsulated Zener diode CBI BZT52C27S with medium current rating and 150 degree junction temperature factory

Plastic encapsulated Zener diode CBI BZT52C27S with medium current rating and 150 degree junction temperature

Key Attributes
Model Number: BZT52C27S
Product Custom Attributes
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
25.1V~28.9V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
27V
Impedance(Zzk):
300Ω
Mfr. Part #:
BZT52C27S
Package:
SOD-323
Product Description

Product Overview

The SOD-323 Plastic-Encapsulated Zener Diodes are general-purpose, medium-current devices designed for automated assembly processes. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for various electronic applications. Lead-free versions are available.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Plastic Encapsulation
  • Construction: Planar die
  • Availability: Lead-free version

Technical Specifications

Characteristic Symbol Value Unit Notes
Forward Voltage VF 0.9 V @ IF = 10mA (Note 2)
Power Dissipation PD 200 mW on ceramic PCB (Note 1)
Thermal Resistance Junction to Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~+150

Electrical Characteristics

Type Marking Nominal Zener Voltage (VZ) Minimum Zener Voltage (VZ) Maximum Zener Voltage (VZ) Test Current (IZT) Maximum Zener Impedance (ZZT) Maximum Reverse Current (IR) Typical Temperature Coefficient Unit (VZ) Unit (IZT) Unit (ZZT) Unit (IR) Unit (Temp Coeff)
BZT52C2V4S (WX) 2.4 2.20 2.60 5 100 @ 5mA 1.0 @ 1.0V -3.5 V mA A mV/
BZT52C2V7S (W1) 2.7 2.5 2.9 5 100 @ 5mA 1.0 @ 1.0V -3.5 V mA A mV/
BZT52C3V0S (W2) 3.0 2.8 3.2 5 95 @ 5mA 1.0 @ 1.0V -3.5 V mA A mV/
BZT52C3V3S (W3) 3.3 3.1 3.5 5 95 @ 5mA 1.0 @ 1.0V -3.5 V mA A mV/
BZT52C3V6S (W4) 3.6 3.4 3.8 5 90 @ 5mA 1.0 @ 1.0V -3.5 V mA A mV/
BZT52C3V9S (W5) 3.9 3.7 4.1 5 90 @ 5mA 1.0 @ 1.0V -3.5 V mA A mV/
BZT52C4V3S (W6) 4.3 4.0 4.6 5 90 @ 5mA 1.0 @ 1.0V -3.5 V mA A mV/
BZT52C4V7S (W7) 4.7 4.4 5.0 5 80 @ 5mA 2.0 @ 1.0V -3.5 V mA A mV/
BZT52C5V1S (W8) 5.1 4.8 5.4 5 60 @ 5mA 2.0 @ 1.0V -2.7 V mA A mV/
BZT52C5V6S (W9) 5.6 5.2 6.0 5 40 @ 5mA 2.0 @ 1.0V -2 V mA A mV/
BZT52C6V2S (WA) 6.2 5.8 6.6 5 10 @ 5mA 4.0 @ 1.0V 0.4 V mA A mV/
BZT52C6V8S (WB) 6.8 6.4 7.2 5 15 @ 5mA 4.0 @ 1.0V 1.2 V mA A mV/
BZT52C7V5S (WC) 7.5 7.0 7.9 5 15 @ 5mA 5.0 @ 1.0V 2.5 V mA A mV/
BZT52C8V2S (WD) 8.2 7.7 8.7 5 15 @ 5mA 5.0 @ 1.0V 3.2 V mA A mV/
BZT52C9V1S (WE) 9.1 8.5 9.6 5 15 @ 5mA 6.0 @ 1.0V 3.8 V mA A mV/
BZT52C10S (WF) 10 9.4 10.6 5 20 @ 5mA 7.0 @ 1.0V 4.5 V mA A mV/
BZT52C11S (WG) 11 10.4 11.6 5 20 @ 5mA 8.0 @ 1.0V 5.4 V mA A mV/
BZT52C12S (WH) 12 11.4 12.7 5 25 @ 5mA 8.0 @ 1.0V 6.0 V mA A mV/
BZT52C13S (WI) 13 12.4 14.1 5 30 @ 5mA 8.0 @ 1.0V 7.0 V mA A mV/
BZT52C15S (WJ) 15 13.8 15.6 5 30 @ 5mA 10.5 @ 1.0V 9.2 V mA A mV/
BZT52C16S (WK) 16 15.3 17.1 5 40 @ 5mA 11.2 @ 1.0V 10.4 V mA A mV/
BZT52C18S (WL) 18 16.8 19.1 5 45 @ 5mA 12.6 @ 1.0V 12.4 V mA A mV/
BZT52C20S (WM) 20 18.8 21.2 5 55 @ 5mA 14.0 @ 1.0V 14.4 V mA A mV/
BZT52C22S (WN) 22 20.8 23.3 5 55 @ 5mA 15.4 @ 1.0V 16.4 V mA A mV/
BZT52C24S (WO) 24 22.8 25.6 5 70 @ 5mA 16.8 @ 1.0V 18.4 V mA A mV/
BZT52C27S (WP) 27 25.1 28.9 2 80 @ 2mA 18.9 @ 0.5V 21.4 V mA A mV/
BZT52C30S (WQ) 30 28.0 32.0 2 80 @ 2mA 21.0 @ 0.5V 24.4 V mA A mV/
BZT52C33S (WR) 33 31.0 35.0 2 80 @ 2mA 23.1 @ 0.5V 27.4 V mA A mV/
BZT52C36S (WS) 36 34.0 38.0 2 90 @ 2mA 25.2 @ 0.5V 30.4 V mA A mV/
BZT52C39S (WT) 39 37.0 41.0 2 130 @ 2mA 27.3 @ 0.5V 33.4 V mA A mV/

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

Package Outline

Plastic surface mounted package; 2 leads

Package: SOD-323


2410121523_CBI-BZT52C27S_C2886380.pdf

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