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quality N Channel MOSFET CET Chino Excel Tech CEC3172 with Low RDS ON and Continuous Drain Current Capability factory
quality N Channel MOSFET CET Chino Excel Tech CEC3172 with Low RDS ON and Continuous Drain Current Capability factory

N Channel MOSFET CET Chino Excel Tech CEC3172 with Low RDS ON and Continuous Drain Current Capability

Key Attributes
Model Number: CEC3172
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
26A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
CEC3172
Package:
DFN-8(3x3)
Product Description

Product Overview

The CEC3172 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This transistor is RoHS compliant and lead-free plated.

Product Attributes

  • Brand: CET-MOS
  • Model: CEC3172
  • Certifications: RoHS compliant
  • Plating: Lead-free
  • Status: Preliminary (Details subject to change)

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Units
FEATURES
Drain-Source Voltage VDS 30 V
Continuous Drain Current @ RJc ID 36 A
Continuous Drain Current @ RJA ID 26 A
RDS(ON) @ VGS = 10V RDS(ON) 20 m
RDS(ON) @ VGS = 4.5V RDS(ON) 32 m
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS TA = 25 C unless otherwise noted 30 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous @ RJc ID 36 A
Drain Current-Continuous @ RJA ID 26 A
Drain Current-Pulsed @ RJc IDM 92 A
Maximum Power Dissipation PD 7 W
Operating and Store Temperature Range TJ,Tstg -55 150 C
Thermal Characteristics
Thermal Resistance, Junction-to-Case RJc b 6 C/W
Thermal Resistance, Junction-to-Ambient RJA b 50 C/W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 30 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 100 A
Gate Body Leakage Current, Forward IGSSR VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSF VGS = -20V, VDS = 0V 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.25 2 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 6.3A 14 20 m
Static Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 5A 24 32 m
Input Capacitance Ciss VDD = 15V, ID = 7A, VGS= 10V, RGEN= 3 590 pF
Reverse Transfer Capacitance Crss VDS = 15V, ID = 7A, VGS = 10V 125 pF
Output Capacitance Coss VDS = 15V, VGS = 0V, f = 1.0 MHz 95 pF
Turn-On Delay Time td(on) 4 ns
Turn-On Rise Time tr 10 ns
Turn-Off Delay Time td(off) 25 ns
Turn-Off Fall Time tf 4 ns
Total Gate Charge Qg 13 nC
Gate-Source Charge Qgs 2 nC
Gate-Drain Charge Qgd 3.5 nC
Drain-Source Diode Forward Current IS VGS = 0V 14 A
Drain-Source Diode Forward Voltage VSD IS = 2A 1.2 V

2410010333_CET-Chino-Excel-Tech-CEC3172_C207742.pdf

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