MM5Z20 Silicon Planar Zener Diode Suitable for Voltage Regulation and Reference Circuit Applications
Key Attributes
Model Number:
MM5Z20
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
55Ω
Diode Configuration:
Independent
Zener Voltage(Range):
18.8V~21.2V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
20V
Impedance(Zzk):
100Ω
Mfr. Part #:
MM5Z20
Package:
SOD-523
Product Description
Product Overview
The MM5Z2V0~MM5Z75 series are silicon planar Zener diodes designed for various voltage regulation applications. These diodes offer a standard Zener breakdown voltage range from 2.0 V to 75 V and a steady-state power rating of 200 mW. They are suitable for applications requiring precise voltage referencing and regulation.
Product Attributes
- Brand: MM (Implied from product code MM5Z)
- Material: Silicon Planar
- Package Type: SOD-523
Technical Specifications
| Model | Type Marking Code | Zener Voltage (VZT) at IZT (mA) (Min.) | Zener Voltage (VZT) at IZT (mA) (Nom.) | Zener Voltage (VZT) at IZT (mA) (Max.) | Zener Impedance (ZZT) at IZK (mA) () | Zener Impedance (ZZK) at IZK (mA) () | Leakage Current (IR) at VR (A) (Max.) | Forward Voltage (VF) at IF = 10 mA (V) (Max.) | ||
|---|---|---|---|---|---|---|---|---|---|---|
| MM5Z2V0 | RD | 1.8 | 2.0 | 2.15 | 5 | 100 | 120 | 0.5 | ||
| MM5Z2V2 | RE | 2.08 | 2.2 | 2.33 | 5 | 100 | 120 | 0.7 | ||
| MM5Z2V4 | Z7 | 2.2 | 2.4 | 2.6 | 5 | 100 | 1000 | 1 | ||
| MM5Z2V7 | A8 | 2.5 | 2.7 | 2.9 | 5 | 100 | 1000 | 1 | ||
| MM5Z3V0 | B8 | 2.8 | 3.0 | 3.2 | 5 | 100 | 1000 | 1 | ||
| MM5Z3V3 | C8 | 3.1 | 3.3 | 3.5 | 5 | 95 | 1000 | 1 | ||
| MM5Z3V6 | D8 | 3.4 | 3.6 | 3.8 | 5 | 90 | 1000 | 1 | ||
| MM5Z3V9 | E8 | 3.7 | 3.9 | 4.1 | 5 | 90 | 1000 | 1 | ||
| MM5Z4V3 | F8 | 4 | 4.3 | 4.6 | 5 | 90 | 1000 | 1 | ||
| MM5Z4V7 | G8 | 4.4 | 4.7 | 5 | 5 | 80 | 800 | 1 | ||
| MM5Z5V1 | H8 | 4.8 | 5.1 | 5.4 | 5 | 60 | 500 | 1 | ||
| MM5Z5V6 | I8 | 5.2 | 5.6 | 6 | 5 | 40 | 200 | 1 | ||
| MM5Z6V2 | J8 | 5.8 | 6.2 | 6.6 | 5 | 10 | 100 | 1 | ||
| MM5Z6V8 | K8 | 6.4 | 6.8 | 7.2 | 5 | 15 | 160 | 1 | ||
| MM5Z7V5 | L8 | 7 | 7.5 | 7.9 | 5 | 15 | 160 | 1 | ||
| MM5Z8V2 | M8 | 7.7 | 8.2 | 8.7 | 5 | 15 | 160 | 1 | ||
| MM5Z9V1 | N8 | 8.5 | 9.1 | 9.6 | 5 | 15 | 160 | 1 | ||
| MM5Z10 | O8 | 9.4 | 10 | 10.6 | 5 | 20 | 160 | 1 | ||
| MM5Z11 | P8 | 10.4 | 11 | 11.6 | 5 | 20 | 160 | 1 | ||
| MM5Z12 | Q8 | 11.4 | 12 | 12.7 | 5 | 25 | 80 | 1 | ||
| MM5Z13 | R8 | 12.4 | 13 | 14.1 | 5 | 30 | 80 | 1 | ||
| MM5Z15 | S8 | 14.3 | 15 | 15.8 | 5 | 30 | 80 | 1 | ||
| MM5Z16 | T8 | 15.3 | 16 | 17.1 | 2 | 40 | 80 | 1 | ||
| MM5Z18 | U8 | 16.8 | 18 | 19.1 | 2 | 45 | 80 | 1 | ||
| MM5Z20 | V8 | 18.8 | 20 | 21.2 | 2 | 55 | 100 | 1 | ||
| MM5Z22 | W8 | 20.8 | 22 | 23.3 | 2 | 55 | 100 | 1 | ||
| MM5Z24 | X8 | 22.8 | 24 | 25.6 | 2 | 70 | 120 | 1 | ||
| MM5Z27 | Y8 | 25.1 | 27 | 28.9 | 2 | 80 | 300 | 1 | ||
| MM5Z30 | Z8 | 28 | 30 | 32 | 2 | 80 | 300 | 1 | ||
| MM5Z33 | A9 | 31 | 33 | 35 | 2 | 80 | 300 | 1 | ||
| MM5Z36 | B9 | 34 | 36 | 38 | 2 | 90 | 500 | 1 | ||
| MM5Z39 | C9 | 37 | 39 | 41 | 2 | 130 | 500 | 2 | ||
| MM5Z43 | D9 | 40 | 43 | 46 | 1 | 150 | 500 | 2 | ||
| MM5Z47 | E9 | 44 | 47 | 50 | 1 | 170 | 500 | 2 | ||
| MM5Z51 | F9 | 48 | 51 | 54 | 1 | 180 | 500 | 1 | ||
| MM5Z56 | G9 | 52 | 56 | 60 | 1 | 200 | 500 | 1 | ||
| MM5Z62 | H9 | 58 | 62 | 66 | 1 | 215 | 500 | 0.2 | ||
| MM5Z68 | I9 | 64 | 68 | 72 | 1 | 240 | 500 | 0.2 | ||
| MM5Z75 | J9 | 70 | 75 | 79 | 1 | 255 | 500 | 0.2 | ||
| Absolute Maximum Ratings | ||||||||||
| Parameter | Symbol | Max. | Unit | |||||||
| Total Device Dissipation | Ptot | 200 | mW | |||||||
| Junction and Storage Temperature Range | Tj , Tstg | -65 to +150 | OC | |||||||
| Package Outline (SOD-523) | A | b | C | D | E | H | O | p | ||
| Dimensions (mm) | 0.70 - 0.60 | 0.4 - 0.3 | 0.135 - 0.100 | 1.25 - 1.15 | 0.85 - 0.75 | 1.7 - 1.5 | 0.1 | (implied) | ||
| Derating Curve | |
|---|---|
| Ambient Temperature: Ta (OC) | Power Dissipation: Ptot (mW) |
| 0 | 300 |
| 25 | 200 |
| 100 | 100 |
| 150 | 0 |
2410121257_CBI-MM5Z20_C2832586.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
