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quality Silicon Planar Zener Diode CBI MM1Z7B5 for Electronic Circuits Requiring Accurate Voltage Regulation factory
quality Silicon Planar Zener Diode CBI MM1Z7B5 for Electronic Circuits Requiring Accurate Voltage Regulation factory

Silicon Planar Zener Diode CBI MM1Z7B5 for Electronic Circuits Requiring Accurate Voltage Regulation

Key Attributes
Model Number: MM1Z7B5
Product Custom Attributes
Impedance(Zzt):
30Ω
Zener Voltage(Range):
7.35V~7.65V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
7.5V
Mfr. Part #:
MM1Z7B5
Package:
SOD-123
Product Description

Product Overview

This product line consists of Silicon Planar Zener Diodes designed for various electronic applications. They offer a power dissipation of 500 mW and a Zener Voltage Tolerance of 2%. These diodes are suitable for use in applications requiring stable voltage references and regulation.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Planar
  • Package Type: SOD-123

Technical Specifications

Model Marking Code Nominal Zener Voltage (Vznom) Test Current (Iz) Zener Voltage Range (Vz) Dynamic Impedance (Zzt) Reverse Leakage Current (Ir) Forward Voltage (VF) at IF = 10 mA
MM1Z2B4 5Y1 2.4 V 5 mA 2.3522.448 V 100 120 A 0.9 V
MM1Z2B7 5Z1 2.7 V 5 mA 2.6462.754 V 110 120 A 0.9 V
MM1Z3B0 6A1 3.0 V 5 mA 2.943.06 V 120 50 A 0.9 V
MM1Z3B3 6B1 3.3 V 5 mA 3.2343.366 V 130 20 A 0.9 V
MM1Z3B6 6C1 3.6 V 5 mA 3.5283.672 V 130 10 A 0.9 V
MM1Z3B9 6D1 3.9 V 5 mA 3.8223.978 V 130 5 A 0.9 V
MM1Z4B3 6E1 4.3 V 5 mA 4.2144.386 V 130 5 A 0.9 V
MM1Z4B7 6F1 4.7 V 5 mA 4.6064.794 V 130 2 A 0.9 V
MM1Z5B1 6G1 5.1 V 5 mA 4.9985.202 V 130 2 A 1.5 V
MM1Z5B6 6H1 5.6 V 5 mA 5.4885.712 V 80 1 A 2.5 V
MM1Z6B2 6J1 6.2 V 5 mA 6.0766.324 V 50 1 A 3 V
MM1Z6B8 6K1 6.8 V 5 mA 6.6646.936 V 30 0.5 A 3.5 V
MM1Z7B5 6L1 7.5 V 5 mA 7.357.65 V 30 0.5 A 4 V
MM1Z8B2 6M1 8.2 V 5 mA 8.0368.364 V 30 0.5 A 5 V
MM1Z9B1 6N1 9.1 V 5 mA 8.9189.282 V 30 0.5 A 6 V
MM1ZB10 6P1 10 V 5 mA 9.810.2 V 30 0.1 A 7 V
MM1ZB11 6Q1 11 V 5 mA 10.7811.22 V 30 0.1 A 8 V
MM1ZB12 6R1 12 V 5 mA 11.7612.24 V 35 0.1 A 9 V
MM1ZB13 6S1 13 V 5 mA 12.7413.26 V 35 0.1 A 10 V
MM1ZB15 6T1 15 V 5 mA 14.715.3 V 40 0.1 A 11 V
MM1ZB16 6U1 16 V 5 mA 15.6816.32 V 40 0.1 A 12 V
MM1ZB18 6W1 18 V 5 mA 17.6418.36 V 45 0.1 A 13 V
MM1ZB20 6X1 20 V 5 mA 19.620.4 V 50 0.1 A 15 V
MM1ZB22 6Y1 22 V 5 mA 21.5622.44 V 55 0.1 A 17 V
MM1ZB24 6Z1 24 V 5 mA 23.5224.48 V 60 0.1 A 19 V
MM1ZB27 7A1 27 V 5 mA 26.4627.54 V 70 0.1 A 21 V
MM1ZB30 7B1 30 V 5 mA 29.430.6 V 80 0.1 A 23 V
MM1ZB33 7C1 33 V 5 mA 32.3433.66 V 80 0.1 A 25 V
MM1ZB36 7D1 36 V 5 mA 35.2836.72 V 90 0.1 A 27 V
MM1ZB39 7E1 39 V 2.5 mA 38.2239.78 V 100 2 A 30 V
MM1ZB43 7F1 43 V 2.5 mA 42.1443.86 V 130 2 A 33 V
MM1ZB47 7G1 47 V 2.5 mA 46.0647.94 V 150 2 A 36 V
MM1ZB51 7H1 51 V 2.5 mA 49.9852.02 V 180 1 A 39 V
MM1ZB56 7J1 56 V 2.5 mA 54.8857.12 V 180 1 A 43 V
MM1ZB62 7K1 62 V 2.5 mA 60.7663.24 V 200 0.2 A 47 V
MM1ZB68 7L1 68 V 2.5 mA 66.6469.36 V 250 0.2 A 52 V
MM1ZB75 7M1 75 V 2.5 mA 73.576.5 V 300 0.2 A 57 V
Parameter Symbol Value Unit
Power Dissipation Ptot 500 mW
Junction Temperature TJ 150 C
Storage Temperature Range TStg -55 to +150 C
Thermal Resistance Junction to Ambient Air RthA 340 C/W

Note: VZ is tested with pulses (20 ms).


2509181520_CBI-MM1Z7B5_C51822191.pdf

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