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quality power management with CET Chino Excel Tech CEM3083 P Channel Enhancement Mode Field Effect Transistor factory
quality power management with CET Chino Excel Tech CEM3083 P Channel Enhancement Mode Field Effect Transistor factory

power management with CET Chino Excel Tech CEM3083 P Channel Enhancement Mode Field Effect Transistor

Key Attributes
Model Number: CEM3083
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
8mΩ@10V,13A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
365pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
37.9nC@5V
Mfr. Part #:
CEM3083
Package:
SO-8
Product Description

Product Overview

The CEM3083 is a P-Channel Enhancement Mode Field Effect Transistor designed for high performance and current handling. It features a super high dense cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power and current management. This surface mount package transistor offers robust performance with a -30V drain-source voltage and up to -13A continuous drain current.

Product Attributes

  • Brand: CET
  • Product Type: P-Channel Enhancement Mode Field Effect Transistor
  • Package: Surface Mount (SO-8)
  • Lead Free Product: Acquired

Technical Specifications

Parameter Symbol Condition Min Typ Max Units
Absolute Maximum Ratings
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID TA = 25 C -52 A
Drain Current-Pulsed IDM -13 A
Maximum Power Dissipation PD TA = 25 C 2.5 W
Operating and Store Temperature Range TJ,Tstg -55 150 C
Thermal Resistance, Junction-to-Ambient
RJA b 50 C/W
Electrical Characteristics (TA = 25 C unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250A -30 V
Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 -100 A
Gate Body Leakage Current, Forward IGSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -1 A
Gate Threshold Voltage VGS(th) VDS = VGS , ID = -250A -1 -3 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -13A 10 m
Static Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = -10A 15.5 m
Forward Transconductance gFS VDS = -15V, ID = -13A 34.5 S
Input Capacitance Ciss VDS = -15V, ID = -13A, VGS = -10V, RGEN = 6 3450 pF
Reverse Transfer Capacitance Coss VDS = -15V, ID = -13A, VGS = -10V, RGEN = 6 465 pF
Output Capacitance Crss VDS = -15V, ID = -13A, VGS = -10V, RGEN = 6 365 pF
Turn-On Delay Time td(on) VDD = -15V, ID = -13A, VGS = -10V, RGEN = 6 18.8 ns
Turn-On Rise Time tr VDD = -15V, ID = -13A, VGS = -10V, RGEN = 6 11.2 ns
Turn-Off Delay Time td(off) VDD = -15V, ID = -13A, VGS = -10V, RGEN = 6 132 ns
Turn-Off Fall Time tf VDD = -15V, ID = -13A, VGS = -10V, RGEN = 6 63 ns
Total Gate Charge Qg VDS = -15V, ID = -13A, VGS = -5V 264 nC
Gate-Source Charge Qgs VDS = -15V, ID = -13A, VGS = -5V 126 nC
Gate-Drain Charge Qgd VDS = -15V, ID = -13A, VGS = -5V 37.9 nC
Drain-Source Diode Forward Current IS b -13 A
Drain-Source Diode Forward Voltage VSD c, VGS = 0V, IS = -1.3A -1.1 V

Notes:

  • a. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • b. Surface Mounted on FR4 Board, t < 10 sec.
  • c. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%.
  • d. Guaranteed by design, not subject to production testing.

2410121952_CET-Chino-Excel-Tech-CEM3083_C83039.pdf

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