Plastic Encapsulated Zener Diode CBI BZT52C3V3S in SOD323 Package for Automated Electronic Assembly

Key Attributes
Model Number: BZT52C3V3S
Product Custom Attributes
Impedance(Zzt):
95Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
3.1V~3.5V
Zener Voltage(Nom):
3.3V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C3V3S
Package:
SOD-323
Product Description

Product Overview

The SOD-323 Plastic-Encapsulated Zener Diodes are general-purpose, medium-current devices designed for automated assembly processes. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for various electronic applications. Available in lead-free versions, they offer reliable performance with a wide range of Zener voltage options.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOD-323
  • Construction: Planar die
  • Encapsulation: Plastic
  • Lead Free: Available

Technical Specifications

Maximum Ratings (Ta=25 unless otherwise specified)
Characteristic Value Unit
Forward Voltage (Note 2) @ IF = 10mA 0.9 V
Power Dissipation (Note 1) 200 mW
Thermal Resistance from Junction to Ambient 625 /W
Junction Temperature 150
Storage Temperature Range -55~+150
Electrical Characteristics (Ta = 25 unless otherwise specified)
TYPE Marking Nominal VZ (V) Min VZ (V) Max VZ (V) IZT (mA) ZZT @ IZT () IZK (mA) IR @ VR (A) TC @ IZT (mV/) Min IZK (mA) Max IZK (mA)
BZT52C2V4S WX 2.4 2.20 2.60 5 100 600 1.0 50 -3.5 0 5
BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 -3.5 0 5
BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 -3.5 0 5
BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 -3.5 0 5
BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 -3.5 0 5
BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 -3.5 0 5
BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 -3.5 0 5
BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 -3.5 0.2 5
BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 -2.7 1.2 5
BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 -2 2.5 5
BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7
BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5
BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3
BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2
BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0
BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0
BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0
BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0
BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0
BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13
BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14
BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16
BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0
BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0
BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0
BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3
BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4
BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4
BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4
BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2
Notes
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
PIN DESCRIPTION
1 Cathode
2 Anode
Package Outline Dimensions
Plastic surface mounted package; 2 leads SOD-323

2410121523_CBI-BZT52C3V3S_C2886312.pdf

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