power rectification Changzhou Starsea Elec SK34B featuring JEDEC DO214AA body and low reverse leakage current
Key Attributes
Model Number:
SK34B
Product Custom Attributes
Reverse Leakage Current (Ir):
500uA@40V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
550mV@3A
Current - Rectified:
3A
Mfr. Part #:
SK34B
Package:
SMB(DO-214AA)
Product Description
Product Overview
The SK32B THRU SK310B series are surface mount Schottky barrier rectifiers designed for efficient power rectification. Featuring low power loss and high efficiency, these rectifiers are ideal for applications requiring high forward surge current capability and reliable performance. The JEDEC DO-214AA molded plastic body with solderable terminals ensures suitability for automated placement and high-temperature soldering processes. These rectifiers are rated for reverse voltages from 20 to 100 Volts and a forward current of 3.0 Amperes.
Product Attributes
- Case: JEDEC DO-214AA molded plastic body
- Terminals: Leads solderable per MIL-STD-750, Method 2026
- Polarity: Color band denotes cathode end
- Mounting Position: Any
- Flammability Classification: Underwriters Laboratory 94V-0
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VDC (V) | I(AV) (A) | IFSM (A) | VF (V) @ 3.0A | IR (mA) @ Rated VDC | RJA (C/W) | CJ (pF) | TJ, TSTG (C) |
|---|---|---|---|---|---|---|---|---|---|---|
| SK32B | 20 | 14 | 20 | 3.0 | 20 | 0.55 | 0.5 | 68.0 | 300 | -55 to +150 |
| SK33B | 30 | 21 | 30 | 3.0 | 20 | 0.55 | 0.5 | 68.0 | 300 | -55 to +150 |
| SK34B | 40 | 28 | 40 | 3.0 | 20 | 0.55 | 0.5 | 68.0 | 300 | -55 to +150 |
| SK35B | 50 | 35 | 50 | 3.0 | 20 | 0.70 | 0.5 | 68.0 | 300 | -55 to +150 |
| SK36B | 60 | 42 | 60 | 3.0 | 20 | 0.70 | 0.5 | 68.0 | 300 | -55 to +150 |
| SK38B | 80 | 56 | 80 | 3.0 | 20 | 0.85 | 0.5 | 68.0 | 300 | -55 to +125 |
| SK310B | 100 | 70 | 100 | 3.0 | 20 | 0.85 | 0.5 | 68.0 | 300 | -55 to +125 |
| Maximum Ratings and Electrical Characteristics (Ratings at 25 C ambient temperature unless otherwise specified) | ||||||||||
| Maximum repetitive peak reverse voltage | SK32B-SK310B: 20 to 100 V | |||||||||
| Maximum RMS voltage | SK32B-SK310B: 14 to 70 V | |||||||||
| Maximum DC blocking voltage | SK32B-SK310B: 20 to 100 V | |||||||||
| Maximum average forward rectified current at TL (see fig.1) | 3.0 A | |||||||||
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load | 20 A | |||||||||
| Maximum instantaneous forward voltage at 3.0A | SK32B-SK36B: 0.55 V; SK38B-SK310B: 0.85 V | |||||||||
| Maximum DC reverse current TA=25 C at rated DC blocking voltage | 0.5 mA | |||||||||
| Maximum DC reverse current TA=100 C at rated DC blocking voltage | 10 mA | |||||||||
| Typical junction capacitance (NOTE 1) | 300 pF | |||||||||
| Typical thermal resistance (NOTE 2) | 68.0 C/W | |||||||||
| Operating junction temperature range | -55 to +150 C | |||||||||
| Storage temperature range | -55 to +150 C | |||||||||
| Weight | 0.003 ounce, 0.093 grams | |||||||||
| Notes: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. P.C.B. mounted with 0.2x0.2(5.0x5.0mm) copper pad areas. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%. | ||||||||||
1810181810_Changzhou-Starsea-Elec-SK34B_C105699.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
