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quality Voltage Regulation Silicon Planar Zener Diodes CBI BZT52C4V7W with 500 mW Power Dissipation Capacity factory
quality Voltage Regulation Silicon Planar Zener Diodes CBI BZT52C4V7W with 500 mW Power Dissipation Capacity factory

Voltage Regulation Silicon Planar Zener Diodes CBI BZT52C4V7W with 500 mW Power Dissipation Capacity

Key Attributes
Model Number: BZT52C4V7W
Product Custom Attributes
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.4V~5V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
4.7V
Impedance(Zzk):
500Ω
Mfr. Part #:
BZT52C4V7W
Package:
SOD-123
Product Description

Product Overview

The BZT52C...W series are silicon planar Zener diodes ideally suited for automated assembly processes. These diodes offer a total power dissipation of up to 500 mW and are designed for various voltage regulation applications.

Product Attributes

  • Brand: BZT (implied by product series)
  • Type: Silicon Planar Zener Diodes
  • Package: SOD-123

Technical Specifications

Parameter Symbol Value Unit Notes
Absolute Maximum Ratings (Ta = 25 C)
Power Dissipation Ptot 500 mW
Junction Temperature TJ 150 C
Storage Temperature Range TStg -65 to +150 C
Characteristics (Ta = 25 C)
Thermal Resistance Junction to Ambient Air RthA 340 C/W
Forward Voltage at IF = 10 mA VF 0.9 V
Zener Voltage Range (VZT for IZT)
Type Marking Code VZ nom IZT VZT Range
BZT52C2V4W MH 2.4 5 2.2...2.6 V
BZT52C2V7W MJ 2.7 5 2.5...2.9 V
BZT52C3V0W MK 3.0 5 2.8...3.2 V
BZT52C3V3W MM 3.3 5 3.1...3.5 V
BZT52C3V6W MN 3.6 5 3.4...3.8 V
BZT52C3V9W MP 3.9 5 3.7...4.1 V
BZT52C4V3W MR 4.3 5 4...4.6 V
BZT52C4V7W MX 4.7 5 4.4...5 V
BZT52C5V1W MY 5.1 5 4.8...5.4 V
BZT52C5V6W MZ 5.6 5 5.2...6 V
BZT52C6V2W NA 6.2 5 5.8...6.6 V
BZT52C6V8W NB 6.8 5 6.4...7.2 V
BZT52C7V5W NC 7.5 5 7...7.9 V
BZT52C8V2W ND 8.2 5 7.7...8.7 V
BZT52C9V1W NE 9.1 5 8.5...9.6 V
BZT52C10W NF 10 5 9.4...10.6 V
BZT52C11W NH 11 5 10.4...11.6 V
BZT52C12W NJ 12 5 11.4...12.7 V
BZT52C13W NK 13 5 12.4...14.1 V
BZT52C15W NM 15 5 13.8...15.6 V
BZT52C16W NN 16 5 15.3...17.1 V
BZT52C18W NP 18 5 16.8...19.1 V
BZT52C20W NR 20 5 18.8...21.2 V
BZT52C22W NX 22 5 20.8...23.3 V
BZT52C24W NY 24 5 22.8...25.6 V
BZT52C27W NZ 27 2 25.1...28.9 V
BZT52C30W PA 30 2 28...32 V
BZT52C33W PB 33 2 31...35 V
BZT52C36W PC 36 2 34...38 V
BZT52C39W PD 39 2 37...41 V
Other Characteristics (Ta = 25 C)
Parameter Symbol Value Unit Notes
Dynamic Impedance (ZZT) at IZT ZZT 600 (Max.) See table above for specific values per type
Dynamic Impedance (ZZK) at IZK ZZK 600 (Max.) See table above for specific values per type
Reverse Leakage Current at VR IR 1 (Max.) A See table above for specific values per type
Zener Voltage tested with pulses 20 ms

2410121236_CBI-BZT52C4V7W_C2832621.pdf

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