Low gate voltage P Channel MOSFET CBI BC3415 designed for 20 volt drain source voltage and switching
Key Attributes
Model Number:
BC3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
60mΩ@2.5V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
300mV
Reverse Transfer Capacitance (Crss@Vds):
160pF@10V
Number:
1 P-Channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
1.45nF@10V
Gate Charge(Qg):
17.2nC@10V
Mfr. Part #:
BC3415
Package:
SOT-23
Product Description
Product Overview
This P-Channel MOSFET, designed for P-Channel 20-V(D-S) applications, offers excellent RDS(ON) with low gate charge and low gate voltages. It is ideal for load switch and PWM applications. Key features include low gate voltages, excellent RDS(ON), and low gate charge, making it suitable for efficient power management in various electronic designs.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: Plastic-Encapsulate MOSFETS
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Static Parameters | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.3 | -0.56 | -1 | V |
| Gate-body leakage current | IGSS | VDS =0V, VGS =8V | 10 | A | ||
| VDS =0V, VGS =4.5V | 1 | A | ||||
| Zero gate voltage drain current | IDSS | VDS =-16V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-4A | 0.037 | 0.050 | ||
| VGS =-2.5V, ID =-4A | 0.045 | 0.060 | ||||
| VGS =-1.8V, ID =-2A | 0.080 | 0.100 | ||||
| Forward transconductance | gFS | VDS =-5V, ID =-4A | 8 | S | ||
| Body diode voltage | VSD | IS=-1A,VGS =0V | -1 | V | ||
| Dynamic Parameters | ||||||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 1450 | pF | ||
| Output capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 205 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 160 | pF | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 6.5 | |||
| Switching Parameters | ||||||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 17.2 | nC | ||
| Gate-Source charge | Qgs | VDS =-10V,VGS =-4.5V,ID =-4A | 1.3 | nC | ||
| Gate-drain charge | Qgd | VDS =-10V,VGS =-4.5V,ID =-4A | 4.5 | nC | ||
| Turn-on delay time | td(on) | VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5 | 9.5 | ns | ||
| Turn-on rise time | tr | VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5 | 17 | ns | ||
| Turn-off delay time | td(off) | VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5 | 94 | ns | ||
| Turn-off fall time | tf | VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5 | 35 | ns | ||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | -20 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 8 | V | ||
| Continuous Drain Current (t10s) | ID | (Ta=25 unless otherwise noted) | -4.0 | A | ||
| Maximum Power Dissipation (t10s) | PD | (Ta=25 unless otherwise noted) | 0.35 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | (Ta=25 unless otherwise noted) | 357 | /W | ||
| Operating Junction Temperature | TJ | (Ta=25 unless otherwise noted) | 150 | |||
| Storage Temperature | TSTG | (Ta=25 unless otherwise noted) | -55 | ~+150 | ||
2410122022_CBI-BC3415_C5362090.pdf
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