N channel MOSFET CBI 2SK3019 featuring low on resistance and fast switching speeds for power management
Key Attributes
Model Number:
2SK3019
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3019
Package:
SOT-23
Product Description
Product Overview
This N-channel MOSFET is designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and allows for easily designed drive circuits. The device is also easily paralleled for increased current handling. It is packaged in a SOT-23 plastic package.
Product Attributes
- Marking: KN
- Package: SOT-23 Plastic Package
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 0.1 | A | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 833 | /W | |||
| Power Dissipation | PD | 0.2 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID = 10A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 2 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS =3V, ID =100A | 0.8 | 1.5 | V | |
| On Characteristics | ||||||
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 8 | |||
| VGS =2.5V,ID =1mA | 13 | |||||
| Forward Transconductance | gFS | VDS =3V, ID =10mA | 20 | mS | ||
| Dynamic Characteristics* | ||||||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | 9 | pF | |||
| Reverse Transfer Capacitance | Crss | 4 | pF | |||
| Switching Characteristics* | ||||||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | 35 | ns | |||
| Turn-Off Delay Time | td(off) | 80 | ns | |||
| Fall Time | tf | 80 | ns | |||
| * These parameters have no way to verify. | ||||||
2410121738_CBI-2SK3019_C2928243.pdf
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