N Channel Enhancement Mode Field Effect Transistor CBI BC3400 designed for high current applications
Key Attributes
Model Number:
BC3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
35mΩ@10V,5.8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
1.05nF
Mfr. Part #:
BC3400
Package:
SOT-23
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor, designed in a SOT-23 plastic-encapsulated package, features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is suitable for various applications requiring efficient power switching and control.
Product Attributes
- Type: N-Channel Enhancement Mode Field Effect Transistor
- Package: SOT-23 Plastic-Encapsulated
- Marking Code: 3400
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | 5.8 | A | |
| Drain Current-Pulsed (note 1) | IDM | 30 | A | |
| Power Dissipation | PD | 350 | mW | |
| Thermal Resistance from Junction to Ambient (note 2) | RJA | 357 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~+150 | ||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||
| Off Characteristics | ||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V |
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | A |
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA |
| On Characteristics | ||||
| Drain-source on-resistance (note 3) | RDS(on) | VGS =10V, ID =5.8A | 35 | m |
| VGS =4.5V, ID =5A | 40 | m | ||
| VGS =2.5V,ID=4A | 52 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 8 | S |
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 - 1.4 | V |
| Dynamic Characteristics (note 4,5) | ||||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 1050 | pF |
| Output capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 99 | pF |
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 77 | pF |
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.6 | |
| Switching Characteristics (note 4,5) | ||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 5 | ns |
| Turn-on rise time | tr | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 7 | ns |
| Turn-off delay time | td(off) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 40 | ns |
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 6 | ns |
| Drain-source diode characteristics and maximum ratings | ||||
| Diode forward voltage (note 3) | VSD | IS=1A,VGS=0V | 1 | V |
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production testing.
2410121456_CBI-BC3400_C5362101.pdf
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