Load Switching P Channel MOSFET CBI BC2301W with 2.1 Amp Continuous Drain Current and 20 Volt Rating
Key Attributes
Model Number:
BC2301W
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
RDS(on):
120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
BC2301W
Package:
SOT-323
Product Description
Product Overview
This P-Channel TrenchFET Power MOSFET, designed for SOT-323 packaging, offers a robust solution for load switching in portable devices and DC/DC converters. Its key features include a -20V drain-source voltage rating and a continuous drain current of -2.1A, making it suitable for demanding applications. The device is engineered for efficiency and reliability in compact electronic systems.
Product Attributes
- Marking: 2301
- Type: P-Channel 20-V(D-S) MOSFET
- Encapsulation: Plastic-Encapsulate MOSFETS
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -2.1 | A | |||
| Pulsed Drain Current | IDM | -4.8 | A | |||
| Continuous Source-Drain Diode Current | IS | -0.72 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient (t 5s) | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-1A | 0.090 | 0.120 | ||
| VGS =-2.5V, ID =-0.5A | 0.110 | 0.170 | ||||
| Forward transconductance | gfs | VDS =-5V, ID =-1.8A | 6.5 | S | ||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 405 | pF | ||
| Output capacitance | Coss | 75 | pF | |||
| Reverse transfer capacitance | Crss | 55 | pF | |||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-3A | 5.5 | 10 | nC | |
| VDS =-10V,VGS =-2.5V,ID =-3A | 3.3 | 6 | nC | |||
| Gate-source charge | Qgs | 0.7 | nC | |||
| Gate-drain charge | Qgd | 1.3 | nC | |||
| Gate resistance | Rg | f =1MHz | 6.0 | |||
| Turn-on delay time | td(on) | VDD=-10V, RL=10, ID =-1A, VGEN=-4.5V,Rg=1 | 11 | 20 | ns | |
| Rise time | tr | 35 | 60 | ns | ||
| Turn-off delay time | td(off) | 30 | 50 | ns | ||
| Fall time | tf | 10 | 20 | ns | ||
| Drain-source body diode characteristics | ||||||
| Continuous source-drain diode current | IS | TC=25 | -1.3 | A | ||
| Pulse diode forward current | ISM | -10 | A | |||
| Body diode voltage | VSD | IS=-0.7A | -0.8 | -1.2 | V | |
2410121501_CBI-BC2301W_C21714133.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
