N channel MOSFET CBI 2SK3019W with low on resistance and fast switching in compact SOT 323 package
Key Attributes
Model Number:
2SK3019W
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3019W
Package:
SOT-323
Product Description
Product Overview
This N-channel MOSFET is designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and allows for easily designed drive circuits. The device is also easily paralleled for increased current handling. It is housed in a SOT-323 plastic package.
Product Attributes
- Marking: KN
- Package: SOT-323 Plastic Package
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Symbol | Parameter | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | 0.1 | A | |||
| RJA | Thermal Resistance, Junction-to-Ambient | 833 | /W | |||
| PD | Power Dissipation | 0.2 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Off Characteristics | ||||||
| VDS(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 10µA | 30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS =30V,VGS = 0V | 1 | µA | ||
| IGSS | Gate –Source leakage current | VGS = ±20V, VDS = 0V | ±2 | µA | ||
| VGS(th) | Gate Threshold Voltage | VDS = 3V, ID =100µA | 0.8 | 1.5 | V | |
| On Characteristics | ||||||
| RDS(on) | Drain-Source On-Resistance | VGS = 4V, ID =10mA | 8 | Ω | ||
| RDS(on) | Drain-Source On-Resistance | VGS = 2.5V,ID =1mA | 13 | Ω | ||
| gFS | Forward Transconductance | VDS =3V, ID =10mA | 20 | mS | ||
| Dynamic Characteristics* | ||||||
| Ciss | Input Capacitance | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Coss | Output Capacitance | 9 | pF | |||
| Crss | Reverse Transfer Capacitance | 4 | pF | |||
| Switching Characteristics* | ||||||
| td(on) | Turn-On Delay Time | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 15 | ns | ||
| tr | Rise Time | 35 | ns | |||
| td(off) | Turn-Off Delay Time | 80 | ns | |||
| tf | Fall Time | 80 | ns | |||
| * These parameters have no way to verify. | ||||||
2410122018_CBI-2SK3019W_C2928249.pdf
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