CET Chino Excel Tech CEM3139 Dual Enhancement Mode MOSFET designed for power management and switching
Key Attributes
Model Number:
CEM3139
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
34mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
2W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
CEM3139
Package:
SOP-8
Product Description
Product Overview
The CEM3139 is a Dual Enhancement Mode Field Effect Transistor featuring both N-Channel and P-Channel configurations. It is designed with a super high dense cell structure for extremely low RDS(ON) and offers high power and current handling capabilities. This surface mount device is RoHS compliant and suitable for various electronic applications requiring efficient switching and power management.
Product Attributes
- Brand: CET-MOS
- Model: CEM3139
- Package: SO-8
- Compliance: RoHS compliant
Technical Specifications
| Parameter | Symbol | N-Channel Units | N-Channel Min | N-Channel Typ | N-Channel Max | P-Channel Units | P-Channel Min | P-Channel Typ | P-Channel Max |
|---|---|---|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) | |||||||||
| Drain-Source Voltage | VDS | V | 20 | V | -30 | ||||
| Gate-Source Voltage | VGS | V | 12 | V | 12 | ||||
| Drain Current-Continuous | ID | A | 9 | A | -6 | ||||
| Drain Current-Pulsed | IDM | A | 36 | A | -24 | ||||
| Maximum Power Dissipation | PD | W | 2.0 | W | 2.0 | ||||
| Operating and Store Temperature Range | TJ, Tstg | C | -55 | 150 | C | -55 | 150 | ||
| Thermal Characteristics | |||||||||
| Thermal Resistance, Junction-to-Ambient | RJA | C/W | 62.5 | C/W | 62.5 | ||||
| N-Channel Electrical Characteristics (TA = 25C unless otherwise noted) | |||||||||
| Drain-Source Breakdown Voltage | BVDSS | V | 20 | ||||||
| Zero Gate Voltage Drain Current | IDSS | A | -100 | ||||||
| Gate Body Leakage Current, Forward | IGSSR | nA | 100 | ||||||
| Gate Body Leakage Current, Reverse | IGSSF | nA | |||||||
| Gate Threshold Voltage | VGS(th) | V | 2.0 | V | -1.0 | ||||
| Static Drain-Source On-Resistance | RDS(on) | m | 16 | m | 34 | ||||
| Input Capacitance | Ciss | pF | 980 | pF | 1015 | ||||
| Reverse Transfer Capacitance | Crss | pF | 165 | pF | 140 | ||||
| Output Capacitance | Coss | pF | 205 | pF | 210 | ||||
| Turn-On Delay Time | td(on) | ns | 15 | ns | 13 | ||||
| Turn-On Rise Time | tr | ns | 10 | ns | 5 | ||||
| Turn-Off Delay Time | td(off) | ns | 44 | ns | 45 | ||||
| Turn-Off Fall Time | tf | ns | 9 | ns | 7 | ||||
| Total Gate Charge | Qg | nC | 13 | nC | 21 | ||||
| Gate-Source Charge | Qgs | nC | 4 | nC | 5.2 | ||||
| Gate-Drain Charge | Qgd | nC | 2 | nC | 2.2 | ||||
| Drain-Source Diode Forward Current | IS | A | 1 | A | -2 | ||||
| Drain-Source Diode Forward Voltage | VSD | V | 1.1 | V | -1.2 | ||||
| P-Channel Electrical Characteristics (TA = 25C unless otherwise noted) | |||||||||
| Drain-Source Breakdown Voltage | BVDSS | V | -30 | ||||||
| Zero Gate Voltage Drain Current | IDSS | A | -100 | ||||||
| Gate Body Leakage Current, Forward | IGSSR | nA | 100 | ||||||
| Gate Body Leakage Current, Reverse | IGSSF | nA | |||||||
| Gate Threshold Voltage | VGS(th) | V | -1.0 | ||||||
| Static Drain-Source On-Resistance | RDS(on) | m | 34 | ||||||
| Input Capacitance | Ciss | pF | |||||||
| Reverse Transfer Capacitance | Crss | pF | |||||||
| Output Capacitance | Coss | pF | |||||||
| Turn-On Delay Time | td(on) | ns | |||||||
| Turn-On Rise Time | tr | ns | |||||||
| Turn-Off Delay Time | td(off) | ns | |||||||
| Turn-Off Fall Time | tf | ns | |||||||
| Total Gate Charge | Qg | nC | |||||||
| Gate-Source Charge | Qgs | nC | |||||||
| Gate-Drain Charge | Qgd | nC | |||||||
| Drain-Source Diode Forward Current | IS | A | |||||||
| Drain-Source Diode Forward Voltage | VSD | V | |||||||
2411200032_CET-Chino-Excel-Tech-CEM3139_C207746.pdf
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