CETChinoExcel Tech CEM3178 Dual NChannel Enhancement Mode Field Effect Transistor for Power Control
Key Attributes
Model Number:
CEM3178
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.6A
Operating Temperature -:
-
RDS(on):
33mΩ@4.5V,5.0A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
-
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
590pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
CEM3178
Package:
SOP-8
Product Description
Product Overview
The CEM3178 is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON) and offers high power and current handling capability. This surface mount package is suitable for various industrial applications requiring robust power switching.
Product Attributes
- Brand: CETsemi
- Product Code: CEM3178
- Package: SO-8
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| FEATURES | ||||||
| Voltage Rating | 30 | V | ||||
| Continuous Drain Current | ID | 7.6 | A | |||
| RDS(ON) @ VGS = 10V | RDS(ON) | VGS = 10V | 22 | m | ||
| RDS(ON) @ VGS = 4.5V | RDS(ON) | VGS = 4.5V | 33 | m | ||
| ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 7.6 | A | |||
| Drain Current-Pulsed | IDM | 30 | A | |||
| Maximum Power Dissipation | PD | 1 | W | |||
| Thermal Characteristics (TA = 25C unless otherwise noted) | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C/W | |||
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30V, VGS = 0V | 1 | A | ||
| Gate Body Leakage Current, Forward | IGSSR | VGS = 20V, VDS = 0V | 100 | nA | ||
| Gate Body Leakage Current, Reverse | IGSSF | VGS = -20V, VDS = 0V | -100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1 | 3 | V | |
| Forward Transconductance | gFS | VDS = 15V, ID = 6A | 590 | mS | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 6.3A | 22 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 5.0A | 33 | m | ||
| Input Capacitance | Ciss | VDS = 15V, ID = 7A, VGS = 0V, f = 1.0 MHz | 125 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15V, ID = 7A, VGS = 0V, f = 1.0 MHz | 10 | pF | ||
| Output Capacitance | Coss | VDS = 15V, ID = 7A, VGS = 0V, f = 1.0 MHz | 95 | pF | ||
| Turn-On Delay Time | td(on) | VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 | 4 | ns | ||
| Turn-On Rise Time | tr | VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 | 25 | ns | ||
| Turn-Off Delay Time | td(off) | VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 | 20 | ns | ||
| Turn-Off Fall Time | tf | VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 | 8 | ns | ||
| Total Gate Charge | Qg | VDS = 15V, ID = 7A, VGS = 10V | 50 | nC | ||
| Gate-Source Charge | Qgs | VDS = 15V, ID = 7A, VGS = 10V | 8 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 15V, ID = 7A, VGS = 10V | 13 | nC | ||
| Drain-Source Diode Forward Current | IS | VGS = 0V | 1.6 | A | ||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0V, IS = 1.6A | 1.2 | V | ||
Note: Specification and data are subject to change without notice.
2410010330_CET-Chino-Excel-Tech-CEM3178_C154332.pdf
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