High Current Capability N Channel MOSFET CET Chino Excel Tech CED83A3G with Low On Resistance Design
Key Attributes
Model Number:
CED83A3G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
93A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
390pF
Number:
1 N-channel
Output Capacitance(Coss):
510pF
Input Capacitance(Ciss):
2.855nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
48.1nC@4.5V
Mfr. Part #:
CED83A3G
Package:
TO-251(IPAK)
Product Description
Product Overview
The CED83A3G/CEU83A3G is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. Featuring a super high dense cell design, it offers extremely low RDS(ON) and high power and current handling capabilities. This transistor is available in TO-251 (I-PAK) and TO-252 (D-PAK) packages, making it suitable for various industrial and electronic applications requiring efficient power management.
Product Attributes
- Brand: CET Semi
- Product Series: CED83A3G/CEU83A3G
- Package Types: TO-251 (I-PAK), TO-252 (D-PAK)
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage | VDS | 30 | V | |||
| Continuous Drain Current | ID | 75 | A | |||
| Pulsed Drain Current | IDM | 372 | A | |||
| RDS(ON) @ VGS = 10V | RDS(ON) | 4.2 | m | |||
| RDS(ON) @ VGS = 4.5V | RDS(ON) | 6.2 | m | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | Tc = 25 C unless otherwise noted | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | Tc = 25 C unless otherwise noted | 75 | A | ||
| Drain Current-Pulsed | IDM | 372 | A | |||
| Maximum Power Dissipation @ TC = 25 C | PD | 93 | W | |||
| Derate above 25 C | 0.5 | W/ C | ||||
| Operating and Store Temperature Range | TJ,Tstg | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 1.0 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C/W | |||
| Electrical Characteristics (Tc = 25 C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30V, VGS = 0V | 1 | A | ||
| Gate Body Leakage Current, Forward | IGSSR | VGS = 20V, VDS = 0V | 100 | nA | ||
| Gate Body Leakage Current, Reverse | IGSSF | VGS = -20V, VDS = 0V | -100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3 | V | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 30A | 4.2 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 20A | 5.2 | m | ||
| Input Capacitance | Ciss | VDS = 15V, ID = 40A, VGS = 5V, f = 1.0 MHz | 2855 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15V, VGS = 0V, f = 1.0 MHz | 390 | pF | ||
| Output Capacitance | Coss | VDS = 15V, VGS = 0V, f = 1.0 MHz | 510 | pF | ||
| Turn-On Delay Time | td(on) | VDD = 15V, ID = 40A, VGS= 4.5V, RGEN= 4.7 | 31 | ns | ||
| Turn-On Rise Time | tr | 26 | ns | |||
| Turn-Off Delay Time | td(off) | 45 | ns | |||
| Turn-Off Fall Time | tf | 24 | ns | |||
| Total Gate Charge | Qg | 62 | nC | |||
| Gate-Source Charge | Qgs | 52 | nC | |||
| Gate-Drain Charge | Qgd | 90 | nC | |||
| Drain-Source Diode Forward Current | IS | VGS = 0V, IS = 50A | 48.1 | A | ||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0V, IS = 50A | 1.2 | V | ||
Details are subject to change without notice. Rev 2. 2011.May
2411220130_CET-Chino-Excel-Tech-CED83A3G_C154193.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
