Dual N Channel Enhancement Mode Field Effect Transistor CET Chino Excel Tech CEM9926A for Power Switching
Key Attributes
Model Number:
CEM9926A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 N-channel
Input Capacitance(Ciss):
720pF
Output Capacitance(Coss):
130pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
6.8nC@4.5V
Mfr. Part #:
CEM9926A
Package:
SOIC-8
Product Description
Product Overview
The CEM9926A is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for high performance in demanding applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This surface mount package is ideal for various electronic designs requiring efficient power switching.
Product Attributes
- Brand: CET Semi
- Product Type: Dual N-Channel Enhancement Mode Field Effect Transistor
- Package: SO-8
- Lead Free Product: Acquired
Technical Specifications
| Parameter | Symbol | Limit/Value | Units | Test Condition |
|---|---|---|---|---|
| FEATURES | ||||
| Drain-Source Voltage | VDS | 20 | V | |
| Continuous Drain Current | ID | 35 | A | TA = 25 C |
| Pulsed Drain Current | IDM | 6 | A | |
| RDS(ON) @ VGS = 4.5V | RDS(ON) | 27 | m | |
| RDS(ON) @ VGS = 2.5V | RDS(ON) | 40 | m | |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 20 | V | TA = 25 C unless otherwise noted |
| Gate-Source Voltage | VGS | 12 | V | |
| Drain Current-Continuous | ID | 35 | A | TA = 25 C unless otherwise noted |
| Drain Current-Pulsed | IDM | 6 | A | a |
| Maximum Power Dissipation | PD | 2.0 | W | SO-8 |
| Operating and Store Temperature Range | TJ,Tstg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C/W | b |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A |
| Gate Threshold Voltage | VGS(th) | 2.2 | V | VGS = VDS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | 27 | m | VGS = 4.5V, ID = 6A |
| Static Drain-Source On-Resistance | RDS(on) | 40 | m | VGS = 2.5V, ID = 5.2A |
| Input Capacitance | Ciss | 720 | pF | VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6 |
| Reverse Transfer Capacitance | Crss | 130 | pF | |
| Output Capacitance | Coss | 95 | pF | |
| Turn-On Delay Time | td(on) | 10 | ns | VDD = 10V, ID = 6A, VGS = 4.5V |
| Turn-On Rise Time | tr | 12 | ns | |
| Turn-Off Delay Time | td(off) | 34 | ns | |
| Turn-Off Fall Time | tf | 20 | ns | |
| Total Gate Charge | Qg | 68 | nC | VDS = 10V, ID = 6A, VGS = 4.5V |
| Drain-Source Diode Forward Current | IS | 35 | A | b |
| Drain-Source Diode Forward Voltage | VSD | 1.8 | V | VGS = 0V, IS = 1.7A |
2410122011_CET-Chino-Excel-Tech-CEM9926A_C82424.pdf
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