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quality SOT-23 packaged ChipNobo BAV99-E3-08-CN diode with fast switching speed and high stability reliability factory
quality SOT-23 packaged ChipNobo BAV99-E3-08-CN diode with fast switching speed and high stability reliability factory

SOT-23 packaged ChipNobo BAV99-E3-08-CN diode with fast switching speed and high stability reliability

Key Attributes
Model Number: BAV99-E3-08-CN
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@100V
Reverse Recovery Time (trr):
6ns
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
715mV@1mA
Current - Rectified:
200mA
Mfr. Part #:
BAV99-E3-08-CN
Package:
SOT-23
Product Description

Product Overview

This SOT-23 packaged semiconductor device is a fast-switching component with a switching speed of less than 6nS and a reverse recovery time (TRR) under 6nS. It offers high stability and reliability, along with low reverse leakage. The device has a maximum power dissipation of 225mW and is suitable for general use in residential and commercial equipment. It is designed for mounting in any position.

Product Attributes

  • Package Type: SOT-23 Small Outline Plastic Package
  • Epoxy UL Flammability Rating: 94V-0
  • Mounting Position: Any
  • Brand: ChipNobo (implied from the notice section)

Technical Specifications

Parameter Symbol Value Unit Test Condition
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Reverse Voltage VR 100 V
Power Dissipation Pd 225 mW
Operating Junction Temperature Tj 150
Storage Temperature Range Ts -65-+150
Average Rectified Current IO 200 mA
Non-repetitive Peak Forward Current IFM 400 mA
Peak Forward Surge Current IFSM 2.0 A @tp=1us; TA=25
Typical Thermal Resistance JA 500 /W Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Reverse Breakdown Voltage VRB 100 V IB=100uA
Reverse Leakage Current IR --- 2.5 uA VR=100V
Forward Voltage VF --- 0.715 V IF=1mA
--- 0.855 V IF=10mA
--- 1.00 --- IF=50mA
--- 1.25 ---
Reverse Recovery Time TRR --- 6 nS IF=150mA; IR=10mA,RL=100; IRR=0.1xIR
Capacitance CT --- 1.5 pF VR=0V, f=1MHZ

MARKING: A7

Precautions: PCB Design (Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs)

For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.


2507091655_ChipNobo-BAV99-E3-08-CN_C42379413.pdf

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