High frequency Schottky barrier diode Changzhou Starsea Elec B5817WS featuring molded plastic body and plated leads
Key Attributes
Model Number:
B5817WS
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@20V
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
20V
Voltage - Forward(Vf@If):
450mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5817WS
Package:
SOD-323
Product Description
Product Overview
The B5817WS-B5819WS series are Schottky barrier diodes designed for low voltage, high frequency applications. They are suitable for use in inverters, as free-wheeling diodes, and for polarity protection. These diodes feature a molded plastic body with plated leads solderable per MIL-STD-750, Method 2026, and polarity symbols marked on the case.
Product Attributes
- Case: Molded plastic body
- Terminals: Plated leads
- Polarity: Symbols marked on case
Technical Specifications
| Model | Symbol | Parameter | Test Conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|---|
| B5817WS | V(BR) | Reverse breakdown voltage | IR=1mA | 0.45 | 0.75 | V |
| IR=1mA | 0.55 | 0.875 | V | |||
| IR=1mA | 0.6 | 0.9 | V | |||
| B5817WS | CD | Diode capacitance | VR=4V, f=1.0MHz | 120 | pF | |
| VR=20V | 1 | pF | ||||
| VR=40V | pF | |||||
| B5817WS | VF | Forward voltage | IF=1A | 0.4 | V | |
| B5818WS | VF | Forward voltage | IF=1A | 0.45 | V | |
| B5819WS | VF | Forward voltage | IF=1A | 0.55 | V | |
| B5817WS | VF | Forward voltage | IF=3A | 0.75 | V | |
| B5818WS | VF | Forward voltage | IF=3A | 0.875 | V | |
| B5819WS | VF | Forward voltage | IF=3A | 0.9 | V | |
| B5817WS | CD | Diode capacitance | VR=4V, f=1.0MHz | 120 | pF | |
| VR=20V | 1 | pF | ||||
| VR=40V | pF | |||||
| B5817WS | CD | Diode capacitance | VR=4V, f=1.0MHz | 120 | pF | |
| B5818WS | CD | Diode capacitance | VR=4V, f=1.0MHz | 120 | pF | |
| B5819WS | CD | Diode capacitance | VR=4V, f=1.0MHz | 120 | pF | |
| B5817WS | IR | Reverse voltage leakage current | VR=20V | 1 | mA | |
| VR=30V | 9 | mA | ||||
| VR=40V | 250 | mA | ||||
| B5818WS | IR | Reverse voltage leakage current | VR=30V | 1 | mA | |
| B5819WS | IR | Reverse voltage leakage current | VR=40V | 1 | mA | |
| B5817WS | VRRM | Peak repetitive peak reverse voltage | 20 | V | ||
| 30 | V | |||||
| 40 | V | |||||
| B5817WS | VRWM | Working peak reverse voltage | 20 | V | ||
| B5818WS | VRWM | Working peak reverse voltage | 30 | V | ||
| B5819WS | VRWM | Working peak reverse voltage | 40 | V | ||
| B5817WS | VR(RMS) | RMS Reverse voltage | 14 | V | ||
| B5818WS | VR(RMS) | RMS Reverse voltage | 21 | V | ||
| B5819WS | VR(RMS) | RMS Reverse voltage | 28 | V | ||
| B5817WS | IO | Average rectified output current | Resistive or inductive load, 0.375''(9.5mm) lead length | 1 | A | |
| B5818WS | IO | Average rectified output current | Resistive or inductive load, 0.375''(9.5mm) lead length | 1.5 | A | |
| B5819WS | IO | Average rectified output current | Resistive or inductive load, 0.375''(9.5mm) lead length | 2 | A | |
| B5817WS-B5819WS | IFSM | Peak forward surge current | @8.3ms pulse width, 2% duty cycle | 40 | A | |
| B5817WS-B5819WS | Pd | Power dissipation | @TA=25C | 500 | mW | |
| B5817WS-B5819WS | RJA | Thermal resistance junction to ambient | 30 | K/W | ||
| B5817WS-B5819WS | TJ | Operating junction temperature range | -55 | +150 | C | |
| B5817WS-B5819WS | TSTG | Storage temperature | -55 | +150 | C |
| Dimension | Millimeters | Inches |
|---|---|---|
| Length, max. | 1.35 | 0.053 |
| Length, min. | 1.15 | 0.045 |
| Width, max. | 1.00 | 0.040 |
| Width, min. | 0.80 | 0.031 |
| Depth, max. | 0.177 | 0.007 |
| Depth, min. | 0.089 | 0.003 |
| Height, max. | 0.4 | 0.016 |
| Height, min. | 0.25 | 0.010 |
| Lead diameter, max. | 0.08 | 0.003 |
| Body length, max. | 1.80 | 0.071 |
| Body length, min. | 1.60 | 0.063 |
| Body width, max. | 2.75 | 0.108 |
| Body width, min. | 2.30 | 0.091 |
Marking: B5817WS:SJ, B5818WS:SK, B5819WS:SL
2204082230_Changzhou-Starsea-Elec-B5817WS_C2992086.pdf
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