N Channel Enhancement Mode Transistor CET Chino Excel Tech CEU12N10 with Low RDS ON and Lead Free Package
Key Attributes
Model Number:
CEU12N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
11A
RDS(on):
180mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
20pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
430pF@25V
Pd - Power Dissipation:
43W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
CEU12N10
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The CED12N10/CEU12N10 is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON), enabling superior power and current handling capabilities. Available in TO-251 (I-PAK) and TO-252 (D-PAK) packages, this lead-free product is suitable for various industrial applications.
Product Attributes
- Brand: CET Semi
- Series: CEU Series, CED Series
- Product Type: N-Channel Enhancement Mode Field Effect Transistor
- Package Types: TO-251 (I-PAK), TO-252 (D-PAK)
- Certifications: Lead free product acquired
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Condition |
|---|---|---|---|---|
| FEATURES | ||||
| Voltage | VDS | 100 | V | |
| Continuous Current | ID | 11 | A | |
| RDS(ON) | 180 | m | @VGS = 10V | |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 100 | V | Tc = 25 C unless otherwise noted |
| Gate-Source Voltage | VGS | 20 | V | |
| Drain Current-Continuous | ID | 43 | A | |
| Drain Current-Pulsed | IDM | 44 | A | |
| Maximum Power Dissipation @ TC = 25 C | PD | 0.29 | W | |
| Derate above 25 C | 44 | W/ C | ||
| Operating and Store Temperature Range | TJ,Tstg | -55 to 175 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case | RJC | 50 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 3.5 | C/W | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 100, VGS = 0V |
| Gate Body Leakage Current, Forward | IGSSR | 150 | nA | VGS = 20V, VDS = 0V |
| Gate Body Leakage Current, Reverse | IGSSF | -100 | nA | VGS = -20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2 | V | VGS = VDS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | 180 | m | VGS = 10V, ID = 6A |
| Forward Transconductance | gFS | 43 | S | VDS = 10V, ID = 6A |
| Input Capacitance | Ciss | 430 | pF | VDD = 80, ID = 11A, VGS = 10V, RGEN = 9.1 |
| Reverse Transfer Capacitance | Coss | 90 | pF | |
| Output Capacitance | Crss | 20 | pF | |
| Turn-On Delay Time | td(on) | 12 | ns | VDS = 80V, ID = 11A, VGS = 10V |
| Turn-On Rise Time | tr | 7 | ns | |
| Turn-Off Delay Time | td(off) | 18 | ns | |
| Turn-Off Fall Time | tf | 3 | ns | |
| Total Gate Charge | Qg | 24 | nC | |
| Gate-Source Charge | Qgs | 14 | nC | |
| Gate-Drain Charge | Qgd | 3.5 | nC | |
| Drain-Source Diode Forward Current | IS | 11 | A | VGS = 0V, IS = 11A |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | |
2409302201_CET-Chino-Excel-Tech-CEU12N10_C82430.pdf
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