Low Threshold Voltage N Channel MOSFET Central CEDM7001 TR PBFREE with Leadless Surface Mount Package
Key Attributes
Model Number:
CEDM7001 TR PBFREE
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-65℃~+150℃@(Tj)
RDS(on):
3Ω@4V,10mA
Gate Threshold Voltage (Vgs(th)):
900mV
Number:
1 N-channel
Pd - Power Dissipation:
100mW
Input Capacitance(Ciss):
9pF@3V
Gate Charge(Qg):
570pC@4.5V
Mfr. Part #:
CEDM7001 TR PBFREE
Package:
SOT-883L
Product Description
Product Overview
The CENTRAL SEMICONDUCTOR CEDM7001 is a surface mount N-Channel Enhancement-mode silicon MOSFET, manufactured using the N-Channel DMOS Process. It is designed for high-speed pulsed amplifier and driver applications, offering low on-resistance (rDS(ON)) and a low threshold voltage. This MOSFET is logic-level compatible and comes in a small leadless surface mount package with a low profile.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Material: Silicon
- Package Type Options: SOT-883L, SOT-883VL, SOT-953, SOT-523
- Complementary P-Channel: CEDM8001
- Marking Code: H
Technical Specifications
| Symbol | Description | Units | SOT-883L / SOT-883VL | SOT-953 | SOT-523 |
| VDS | Drain-Source Voltage | V | 20 | 20 | 20 |
| VGS | Gate-Source Voltage | V | 10 | 10 | 10 |
| ID | Continuous Drain Current (Steady State) | mA | 100 | 100 | 100 |
| IDM | Peak Drain Current, tp=10s | mA | 200 | 200 | 200 |
| PD | Power Dissipation | mW | 100 | 250 | 250 |
| TJ, Tstg | Operating and Storage Junction Temperature | C | -65 to +150 | -65 to +150 | -65 to +150 |
| BVDSS | Drain-Source Breakdown Voltage (VGS=0, ID=100A) | V | 20 | 20 | 20 |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=250A) | V | 0.6 - 0.9 | 0.6 - 0.9 | 0.6 - 0.9 |
| rDS(ON) | On-Resistance (VGS=4.0V, ID=10mA) | 0.9 - 3.0 | 0.9 - 3.0 | 0.9 - 3.0 | |
| rDS(ON) | On-Resistance (VGS=2.5V, ID=10mA) | 1.3 - 4.0 | 1.3 - 4.0 | 1.3 - 4.0 | |
| rDS(ON) | On-Resistance (VGS=1.5V, ID=1.0mA) | 15 | 15 | 15 | |
| gFS | Forward Transconductance (VDS=10V, ID=100mA) | mS | 100 | 100 | 100 |
| Ciss | Input Capacitance (VDS=3.0V, VGS=0, f=1.0MHz) | pF | 9.0 | 9.0 | 9.0 |
| Coss | Output Capacitance (VDS=3.0V, VGS=0, f=1.0MHz) | pF | 9.5 | 9.5 | 9.5 |
| Crss | Reverse Transfer Capacitance (VDS=3.0V, VGS=0, f=1.0MHz) | pF | 4.0 | 4.0 | 4.0 |
| Qg(tot) | Total Gate Charge (VDS=10V, VGS=4.5V, ID=100mA) | nC | 0.566 | 0.566 | 0.566 |
| Qgs | Gate-Source Charge (VDS=10V, VGS=4.5V, ID=100mA) | nC | 0.16 | 0.16 | 0.16 |
| Qgd | Gate-Drain Charge (VDS=10V, VGS=4.5V, ID=100mA) | nC | 0.08 | 0.08 | 0.08 |
| ton | Turn-on Time (VDD=3.0V, VGS=2.5V, ID=10mA) | ns | 50 | 50 | 50 |
| toff | Turn-off Time (VDD=3.0V, VGS=2.5V, ID=10mA) | ns | 75 | 75 | 75 |
2411220544_Central-CEDM7001-TR-PBFREE_C5240483.pdf
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