High Power Dual P Channel Enhancement Mode Transistor CET Chino Excel Tech CEM6867 with SO 8 Package
Key Attributes
Model Number:
CEM6867
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.1A
Operating Temperature -:
-
RDS(on):
170mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
2 P-Channel
Input Capacitance(Ciss):
645pF
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15.6nC@10V
Mfr. Part #:
CEM6867
Package:
SOP-8
Product Description
Product Overview
The CEM6867 is a Dual P-Channel Enhancement Mode Field Effect Transistor designed for high performance and efficiency. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This surface mount package is suitable for various applications requiring robust power management. Key electrical characteristics include a drain-source voltage of -60V, continuous drain current of -3.1A, and low on-resistance values of 130m at VGS = -10V and 170m at VGS = -4.5V.
Product Attributes
- Brand: CET
- Product Type: Dual P-Channel Enhancement Mode Field Effect Transistor
- Package: SO-8
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Drain Current-Continuous | ID | -3.1 | A | |
| Drain Current-Pulsed | IDM | -12 | A | |
| Maximum Power Dissipation | PD | 2.0 | W | TA = 25°C |
| Operating and Store Temperature Range | TJ,Tstg | -55 to 150 | °C | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | |
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS = 0V, ID = -250µA |
| Gate Threshold Voltage | VGS(th) | -1.0 | V | VDS = VGS, ID = -250µA |
| Static Drain-Source On-Resistance | RDS(on) | 130 | mΩ | VGS = -10V, ID = -3.1A |
| Static Drain-Source On-Resistance | RDS(on) | 170 | mΩ | VGS = -4.5V, ID = -2.8A |
| Input Capacitance | Ciss | 645 | pF | VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω |
| Reverse Transfer Capacitance | Crss | 65 | pF | VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω |
| Output Capacitance | Coss | 40 | pF | VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω |
| Turn-On Delay Time | td(on) | 12 | ns | VDS = -30V, ID = -3.1A, VGS = -10V |
| Turn-Off Fall Time | tf | 4 | ns | VDS = -30V, ID = -3.1A, VGS = -10V |
| Turn-Off Delay Time | td(off) | 30 | ns | VDS = -30V, ID = -3.1A, VGS = -10V |
| Turn-On Rise Time | tr | 8 | ns | VDS = -30V, ID = -3.1A, VGS = -10V |
| Total Gate Charge | Qg | 60 | nC | VDS = -30V, VGS = 0V, f = 1.0 MHz |
| Drain-Source Diode Forward Current | IS | -1.5 | A | VGS = 0V, IS = -1.5A |
| Drain-Source Diode Forward Voltage | VSD | -1.2 | V | VGS = 0V, IS = -1.5A |
2411220722_CET-Chino-Excel-Tech-CEM6867_C154333.pdf
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