Silicon MOSFET Central CXDM3069N TR PBFREE for high speed pulsed amplifier and power supply circuits
Key Attributes
Model Number:
CXDM3069N TR PBFREE
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.9A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
30mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
47pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
580pF@15V
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
CXDM3069N TR PBFREE
Package:
SOT-89
Product Description
Product Overview
The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET designed for high-speed pulsed amplifier and driver applications. It offers high current capability, low on-resistance (rDS(ON)), a low threshold voltage, and low leakage current, making it suitable for load/power switches, power supply converter circuits, and battery-powered portable equipment.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Product Type: Surface Mount N-Channel Enhancement-Mode Silicon MOSFET
- Case Type: SOT-89
- Marking: FULL PART NUMBER
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units | |
|---|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 30 | V | ||||
| VGS | Gate-Source Voltage | 12 | V | ||||
| ID | Continuous Drain Current (Steady State) | 6.9 | A | ||||
| IDM | Maximum Pulsed Drain Current | tp=10s | 40 | A | |||
| PD | Power Dissipation | 1.2 | W | ||||
| TJ, Tstg | Operating and Storage Junction Temperature | -55 | +150 | C | |||
| JA | Thermal Resistance | 104 | C/W | ||||
| IGSSF, IGSSR | Gate-Source Leakage | VGS=12V, VDS=0 | 100 | nA | |||
| IDSS | Drain-Source Leakage | VDS=24V, VGS=0 | 1.0 | A | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0, ID=250A | 30 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250A | 0.7 | 0.9 | 1.4 | V | |
| rDS(ON) | Drain-Source On-Resistance | VGS=10V, ID=7.0A | 25 | 30 | m | ||
| VGS=4.5V, ID=6.0A | 28 | 35 | m | ||||
| VGS=2.5V, ID=4.0A | 38 | 50 | m | ||||
| Qg(tot) | Total Gate Charge | VDS=15V, VGS=10V, ID=5.4A | 11 | nC | |||
| Qgs | Gate-Source Charge | 1.0 | nC | ||||
| Qgd | Gate-Drain Charge | 1.2 | nC | ||||
| Capacitance | VDS=15V, VGS=0, f=1.0MHz | Crss | 47 | pF | |||
| Ciss | 580 | pF | |||||
| Coss | 42 | pF | |||||
| Switching Time | VDD=15V, ID=1.0A, RG=15 | ton | 20 | ns | |||
| toff | 28 | ns |
2411220727_Central-CXDM3069N-TR-PBFREE_C7257501.pdf
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