N Channel Enhancement Mode FET CET Chino Excel Tech CED6426 Offering 16 Amp Continuous Drain Current
Key Attributes
Model Number:
CED6426
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
66mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-channel
Input Capacitance(Ciss):
680pF
Output Capacitance(Coss):
80pF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
12.9nC@10V
Mfr. Part #:
CED6426
Package:
TO-251(IPAK)
Product Description
Product Overview
The CED6426/CEU6426 is an N-Channel Enhancement Mode Field Effect Transistor designed with a super high dense cell structure for extremely low RDS(ON). It offers high power and current handling capability, making it suitable for various applications. Available in TO-251 (I-PAK) and TO-252 (D-PAK) packages, this lead-free product ensures excellent performance with a drain-source voltage of 60V and a continuous drain current of 16A.
Product Attributes
- Brand: CET Semi
- Product Series: CEU Series (TO-252), CED Series (TO-251)
- Package Types: TO-251 (I-PAK), TO-252 (D-PAK)
- Environmental Compliance: Lead free product
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 60 | V | Tc = 25 C unless otherwise noted |
| Gate-Source Voltage | VGS | ±20 | V | Tc = 25 C unless otherwise noted |
| Drain Current-Continuous | ID | 16 | A | Tc = 25 C unless otherwise noted |
| Drain Current-Pulsed | IDM | 64 | A | Tc = 25 C unless otherwise noted |
| Maximum Power Dissipation @ TC = 25 C | PD | 32 | W | Tc = 25 C unless otherwise noted |
| Derate above 25 C | - | 0.26 | W/°C | Tc = 25 C unless otherwise noted |
| Operating and Store Temperature Range | TJ,Tstg | -55 to 150 | °C | - |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case | RθJC | 50 | °C/W | - |
| Thermal Resistance, Junction-to-Ambient | RθJA | 3.9 | °C/W | - |
| Electrical Characteristics (Tc = 25 C unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250µA |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V |
| Gate Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 3 | V | VGS = VDS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS(on) | 66 | mΩ | VGS = 10V, ID = 8A |
| Static Drain-Source On-Resistance | RDS(on) | 85 | mΩ | VGS = 4.5V, ID = 6.4A |
| Forward Transconductance | gFS | 65 | S | VDS = 10V, ID = 4.5A |
| Input Capacitance | Ciss | 680 | pF | VDD = 30V, ID = 1A, VGS = 10V, RGEN = 6Ω |
| Reverse Transfer Capacitance | Crss | 80 | pF | |
| Output Capacitance | Coss | 45 | pF | |
| Turn-On Delay Time | td(on) | 10 | ns | VDD = 30V, ID = 4.5A, VGS = 10V |
| Turn-On Rise Time | tr | 29.7 | ns | |
| Turn-Off Delay Time | td(off) | 5.8 | ns | |
| Turn-Off Fall Time | tf | 17.1 | ns | |
| Total Gate Charge | Qg | 20 | nC | VDS = 25V, VGS = 0V, f = 1.0 MHz |
| Gate-Source Charge | Qgs | 5.9 | nC | |
| Gate-Drain Charge | Qgd | 1.6 | nC | |
| Drain-Source Diode Forward Current | IS | 16 | A | VGS = 0V, IS = 8A |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 8A |
2411220230_CET-Chino-Excel-Tech-CED6426_C83037.pdf
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