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quality Low voltage high frequency Schottky diode Changzhou Starsea Elec B5818W with molded plastic body design factory
quality Low voltage high frequency Schottky diode Changzhou Starsea Elec B5818W with molded plastic body design factory

Low voltage high frequency Schottky diode Changzhou Starsea Elec B5818W with molded plastic body design

Key Attributes
Model Number: B5818W
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@30V
Non-Repetitive Peak Forward Surge Current:
9A
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
550mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5818W
Package:
SOD-123
Product Description

Product Overview

The B5817W, B5818W, and B5819W are Schottky diodes designed for low voltage, high frequency applications. They are suitable for use in inverters, as free-wheeling diodes, and for polarity protection. These diodes feature plated leads solderable per MIL-STD-750, Method 2026.

Product Attributes

  • Case: Molded plastic body
  • Terminals: Plated leads
  • Polarity: Symbols marked on case

Technical Specifications

Model Symbol Parameter Test Conditions Min. Max. Unit
B5817W / B5818W / B5819W V(BR) Reverse breakdown voltage IR=1mA 0.45 0.75 V
V(BR) Reverse breakdown voltage IR=1mA 0.55 0.875 V
V(BR) Reverse breakdown voltage IR=1mA 0.6 0.9 V
B5817W / B5818W / B5819W IR Reverse voltage leakage current 120 1 µA
IR Reverse voltage leakage current 9 250 µA
IR Reverse voltage leakage current 500 - µA
B5817W / B5818W / B5819W CD Diode capacitance VR=4V, f=1.0MHz 20 pF
CD Diode capacitance VR=20V 9 pF
CD Diode capacitance VR=30V 7 pF
B5817W / B5818W / B5819W VF Forward voltage IF=1A 0.25 - V
VF Forward voltage IF=1A 0.37 - V
VF Forward voltage IF=3A 0.5 - V
B5817W VRRM Peak repetitive peak reverse voltage @TA=25C 20 - V
B5818W VRRM Peak repetitive peak reverse voltage @TA=25C 30 - V
B5819W VRRM Peak repetitive peak reverse voltage @TA=25C 40 - V
B5817W / B5818W / B5819W IO Average rectified output current 1 - A
IFSM Peak forward surge current @=8.3ms 14 - A
IFSM Peak forward surge current @=8.3ms 28 - A
B5817W / B5818W / B5819W Pd Power dissipation 20 - mW
RJA Thermal resistance junction to ambient - 30 K/W
TSTG Storage temperature -55 +150 C
Dimensions (mm/inches): SOD-123 package: Length 3.86(0.152) - 3.56(0.145), Width 2.84(0.112) - 2.54(0.100), Height 1.80(.071) - 1.40(.055), Terminal width .71(.028) - .50(.020), Lead length .15(.006) MIN

2409292303_Changzhou-Starsea-Elec-B5818W_C169584.pdf

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