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quality SOT23 packaged Chao He MMBT3906 transistor designed for small signal switching and general electronic factory
quality SOT23 packaged Chao He MMBT3906 transistor designed for small signal switching and general electronic factory

SOT23 packaged Chao He MMBT3906 transistor designed for small signal switching and general electronic

Key Attributes
Model Number: MMBT3906
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
200mA
Number:
1 PNP
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description

Product Overview

The MMBT3906 is a small signal PNP transistor encapsulated in a SOT-23 surface-mounted device (SMD) plastic package. It is complementary to the MMBT3904 and is ideally suited for automatic insertion and general-purpose switching applications. This transistor offers a collector current of -0.2A and a collector-base voltage of -40V.

Product Attributes

  • Brand: CHAOHE MICROELECTRONICS CO., LTD.
  • Model: MMBT3906
  • Package: SOT-23
  • Material: Halogen free
  • Flammability Rating: UL 94V-0
  • Reel Size: 7 inches
  • Quantity per Reel: 3,000pcs
  • Marking Code: 2A

Technical Specifications

Symbol Parameter Value Unit Test Conditions
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -200 mA
PC Collector Power Dissipation 200 mW
RJA Thermal Resistance From Junction To Ambient 625 /W
TJ,Tstg Operation Junction and Storage Temperature Range -55+150
V(BR)CBO Collector-base breakdown voltage -40 V IC=-10A, IE=0
V(BR)CEO Collector-emitter breakdown voltage -40 V IC= -1mA, IB=0
V(BR)EBO Emitter-base breakdown voltage -5 V IE= -10A, IC=0
ICBO Collector cut-off current -100 nA VCB= -40 V, IE=0
ICEX Collector cut-off current -50 nA VCE=-30V, VBE(off)=-3V
IEBO Emitter cut-off current -100 nA VEB= -5V, IC=0
hFE1 DC current gain 100 - 300 VCE=-1V, IC= -10mA
hFE2 DC current gain 60 VCE= -1V, IC=-50mA
hFE3 DC current gain 30 VCE= -2V, IC=-100mA
VCE(sat) Collector-emitter saturation voltage -0.3 V IC=-50mA, IB=-5mA
VBE(sat) Base-emitter saturation voltage -0.95 V IC= -50mA, IB=-5mA
fT Transition frequency 300 MHz VCE=-20V,IC=-10mA,f=100MHz
td Delay Time 35 nS VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA
tr Rise Time 35 nS VCC=-3V,IC=-10mA IB1=IB2=-1mA
ts Storage Time 225 nS VCC=-3V,IC=-10mA IB1=IB2=-1mA
tf Fall Time 75 nS VCC=-3V,IC=-10mA IB1=IB2=-1mA
Symbol Dimension Min Nom Max Unit
A 0.9 1.05 1.2 mm
A1 0.0 0.05 0.1 mm
A2 0.9 1.00 1.10 mm
A3 0.55 0.60 0.65 mm
b 0.30 0.40 0.50 mm
c 0.10 0.11 0.12 mm
D 2.80 2.90 3.0 mm
E 2.25 2.40 2.55 mm
E1 1.20 1.30 1.40 mm
e 1.8 1.9 2.0 mm
L 0.30 0.40 0.50 mm
L1 0.475 0.55 0.625 mm
0 3 6 o

2511071025_Chao-He-MMBT3906_C51953475.pdf

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