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quality CET Chino Excel Tech CEM6086L Surface Mount N Channel Enhancement Mode Transistor for Power Management factory
quality CET Chino Excel Tech CEM6086L Surface Mount N Channel Enhancement Mode Transistor for Power Management factory

CET Chino Excel Tech CEM6086L Surface Mount N Channel Enhancement Mode Transistor for Power Management

Key Attributes
Model Number: CEM6086L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
43nC@4.5V
Mfr. Part #:
CEM6086L
Package:
SOP-8
Product Description

Product Overview

The CEM6086L is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance applications. It features a super high dense cell design for extremely low RDS(ON) and high power and current handling capability. This surface mount package is suitable for various industrial and electronic applications requiring efficient power switching.

Product Attributes

  • Brand: CET Semi
  • Product Type: N-Channel Enhancement Mode Field Effect Transistor
  • Package: Surface Mount (SO-8)
  • Lead Free: Yes
  • Status: Preliminary (Details subject to change)

Technical Specifications

Parameter Symbol Min Typ Max Units Test Condition
FEATURES
Drain-Source Voltage VDS 60 V
Drain Current-Continuous ID 48 A TA = 25 C
Drain Current-Pulsed IDM 12 A
RDS(ON) @ VGS = 10V RDS(ON) 12 m
RDS(ON) @ VGS = 4.5V RDS(ON) 15 m
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 48 A TA = 25 C
Drain Current-Pulsed IDM 12 A
Maximum Power Dissipation PD 1.5 W SO-8
Operating and Store Temperature Range TJ,Tstg -55 150 C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient RJA 50 C/W b
Electrical Characteristics (Tc = 25 C unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 A VDS = 60V, VGS = 0V
Gate Body Leakage Current, Forward IGSSR 100 nA VGS = 20V, VDS = 0V
Gate Body Leakage Current, Reverse IGSSF -100 nA VGS = -20V, VDS = 0V
Gate Threshold Voltage VGS(th) 2.5 V VGS = VDS, ID = 250A
Static Drain-Source On-Resistance RDS(on) 11.5 15 m VGS = 4.5V, ID = 6A
Static Drain-Source On-Resistance RDS(on) 9.5 11.5 m VGS = 10V, ID = 8A
Input Capacitance Ciss 2800 pF VDS = 25V, VGS = 0V, f = 1.0 MHz
Reverse Transfer Capacitance Crss 220 pF
Output Capacitance Coss 160 pF
Turn-On Delay Time td(on) 20 ns VDD = 30V, ID = 5A, VGS = 10V, RGEN = 4.7
Turn-On Rise Time tr 9 ns
Turn-Off Delay Time td(off) 74 ns
Turn-Off Fall Time tf 15 ns
Total Gate Charge Qg 40 nC VDS = 48V, ID = 5A, VGS = 4.5V
Gate-Source Charge Qgs 18 nC
Gate-Drain Charge Qgd 33 nC
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Current IS 48 A b
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 2A

Notes:

  • a. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • b. Pulse Test: Pulse Width < 300s, Duty Cycle < 2%.
  • c. Guaranteed by design, not subject to production testing.

2410010330_CET-Chino-Excel-Tech-CEM6086L_C154376.pdf

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