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quality CET Chino Excel Tech CES2307A SOT 23 P Channel Enhancement Mode Transistor with Rugged Construction factory
quality CET Chino Excel Tech CES2307A SOT 23 P Channel Enhancement Mode Transistor with Rugged Construction factory

CET Chino Excel Tech CES2307A SOT 23 P Channel Enhancement Mode Transistor with Rugged Construction

Key Attributes
Model Number: CES2307A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-
RDS(on):
120mΩ@4.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
640pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
CES2307A
Package:
SOT-23
Product Description

Product Overview

The CES2307 is a P-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON) and a rugged, reliable construction. This transistor is available in a SOT-23 package and is a lead-free product. Key electrical characteristics include a drain-source voltage of -30V, a continuous drain current of -3.2A, and low on-resistance values of 78m at VGS = -10V and 120m at VGS = -4.5V.

Product Attributes

  • Brand: CETsemi (implied by URL)
  • Package Type: SOT-23
  • Technology: P-Channel Enhancement Mode Field Effect Transistor
  • Compliance: Lead-free product

Technical Specifications

Parameter Symbol Condition Limit Units
FEATURES
Drain-Source Voltage VDS -30 V
Continuous Drain Current ID TA = 25 C -3.2 A
RDS(ON) @ VGS = -10V RDS(ON) VGS = -10V, ID = -3.2A 78 m
RDS(ON) @ VGS = -4.5V RDS(ON) VGS = -4.5V, ID = -2.5A 120 m
ABSOLUTE MAXIMUM RATINGS
Gate-Source Voltage VGS 20 V
Drain Current-Pulsed IDM -12 A
Maximum Power Dissipation PD TA = 25 C 1.25 W
Operating and Store Temperature Range TJ, Tstg -55 to 150 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient RJA b 100 C/W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250A -30 V
Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 A
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V -100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1 to -3 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -3.2A 78 m
Static Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = -2.5A 120 m
Forward Transconductance gFS VDS = -10V, ID = -3.2A 60 S
Input Capacitance Ciss VDS = -15V, ID = -3.2A, VGS = -10V 640 pF
Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz 95 pF
Output Capacitance Coss VDS = -15V, VGS = 0V, f = 1.0 MHz 130 pF
Turn-On Delay Time td(on) VDD = -15V, ID= -1A, VGS = -10V, RGEN = 6 11 ns
Turn-On Rise Time tr VDD = -15V, ID= -1A, VGS = -10V, RGEN = 6 5 ns
Turn-Off Delay Time td(off) VDD = -15V, ID= -1A, VGS = -10V, RGEN = 6 30 ns
Turn-Off Fall Time tf VDD = -15V, ID= -1A, VGS = -10V, RGEN = 6 7 ns
Total Gate Charge Qg VDS = -15V, ID = -3.2A, VGS = -10V 22 nC
Gate-Source Charge Qgs VDS = -15V, ID = -3.2A, VGS = -10V 10 nC
Gate-Drain Charge Qgd VDS = -15V, ID = -3.2A, VGS = -10V 60 nC
Drain-Source Diode Forward Current IS VGS = 0V -3.2 A
Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = -0.75A -1.2 V

2409301933_CET-Chino-Excel-Tech-CES2307A_C154282.pdf

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