N Channel Enhancement Mode Field Effect Transistor CHENMKO ENTERPRISE CHMNB00HESG7GP S Surface Mount Package DFNT 1006B
Key Attributes
Model Number:
CHMNB00HESG7GP-S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
800mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
400mΩ@1.8V,0.1A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
6pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
67pF@10V
Pd - Power Dissipation:
450mW
Gate Charge(Qg):
1.4nC@10V
Mfr. Part #:
CHMNB00HESG7GP-S
Package:
DFN-3(0.6x1)
Product Description
Product Overview
The CHMNB00HESG7GP-S is a surface mount N-Channel Enhancement Mode Field Effect Transistor manufactured by CHENMKO ENTERPRISE CO., LTD. It features extremely low threshold voltage and ESD protection, making it suitable for small surface mounting applications. This transistor operates at 20 Volts and 0.8 Amperes.
Product Attributes
- Brand: CHENMKO ENTERPRISE CO., LTD
- Product Type: N-Channel Enhancement Mode Field Effect Transistor
- Package Type: DFNT-1006B
Technical Specifications
| Specification | Value |
|---|---|
| Model Number | CHMNB00HESG7GP-S |
| Voltage Rating | 20 Volts |
| Current Rating | 0.8 Ampere |
| Package Dimensions (DFNT-1006B) | 0.95~1.075 mm (Length), 0.47~0.53 mm (Width), 0.2~0.3 mm (Height) |
| Marking Code | 31 |
Electrical Characteristics (CHMNB00HESG7GP-S)
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| VGS(th) (Threshold Voltage) | - | 0.5 | 0.8 | V |
| ID (Continuous Drain Current) | - | 0.8 | - | A |
| VDS (Drain-Source Voltage) | - | 20 | - | V |
| RDS(on) (On-Resistance) | - | - | - | |
| Ciss (Input Capacitance) | - | - | - | pF |
| Coss (Output Capacitance) | - | - | - | pF |
| Crss (Reverse Transfer Capacitance) | - | - | - | pF |
| tr (Rise Time) | - | - | - | ns |
| tf (Fall Time) | - | - | - | ns |
Date Code Information
2018 Year Date Code: N P Q R S T U V W X Y Z (JAN. FEB. MAR. APR MAY JUNE JULY AUG. SEP. OCT NOV. DEC.)
2019 Year Date Code: A B C D E F G H J K L M (JAN. FEB. MAR. APR MAY JUNE JULY AUG. SEP. OCT NOV. DEC.)
Additional Codes: x1, x2 (Line code)
2411220236_CHENMKO-ENTERPRISE-CHMNB00HESG7GP-S_C5182469.pdf
Related Products
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
