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quality N Channel MOSFET CET Chino Excel Tech CES2308 with 20V Drain Source Voltage and ESD Protection 2KV factory
quality N Channel MOSFET CET Chino Excel Tech CES2308 with 20V Drain Source Voltage and ESD Protection 2KV factory

N Channel MOSFET CET Chino Excel Tech CES2308 with 20V Drain Source Voltage and ESD Protection 2KV

Key Attributes
Model Number: CES2308
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.4A
RDS(on):
27mΩ@4.5V,5.4A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
4.3nC@4.5V
Mfr. Part #:
CES2308
Package:
SOT-23
Product Description

Product Overview

The CES2308 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON), making it rugged and reliable. This RoHS compliant transistor is ESD protected up to 2KV and is available in a SOT-23 package. Its key specifications include a 20V drain-source voltage, 5.4A continuous drain current, and low on-resistance values of 27m at VGS = 4.5V and 36m at VGS = 2.5V.

Product Attributes

  • Brand: CET-MOS (implied by URL)
  • Package: SOT-23
  • Compliance: RoHS compliant
  • Protection: ESD Protected 2KV
  • Design: High dense cell design

Technical Specifications

Parameter Symbol Limit/Value Units Test Condition
FEATURES
Drain-Source Voltage VDS 20 V
Drain Current-Continuous ID 5.4 A TA = 25 C
RDS(ON) @ VGS = 4.5V RDS(ON) 27 m VGS = 4.5V
RDS(ON) @ VGS = 2.5V RDS(ON) 36 m VGS = 2.5V
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 20 V TA = 25 C unless otherwise noted
Gate-Source Voltage VGS 12 V TA = 25 C unless otherwise noted
Drain Current-Continuous ID 5.4 A TA = 25 C unless otherwise noted
Drain Current-Pulsed IDM 22 A TA = 25 C unless otherwise noted
Maximum Power Dissipation PD 1.25 W TA = 25 C unless otherwise noted
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient RJA 100 C/W b
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 A VDS = 20V, VGS = 0V
Gate Body Leakage Current, Forward IGSSF 10 A VGS = 12V, VDS = 0V
Gate Body Leakage Current, Reverse IGSSR -10 A VGS = -12V, VDS = 0V
Gate Threshold Voltage VGS(th) 0.5 V VGS = VDS, ID = 250A
Static Drain-Source On-Resistance RDS(on) 27 m VGS = 4.5V, ID = 5.4A
Static Drain-Source On-Resistance RDS(on) 36 m VGS = 2.5V, ID = 4.3A
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(on) 0.35 s VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6
Turn-On Rise Time tr 0.87 s VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6
Turn-Off Delay Time td(off) 2.01 s VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6
Turn-Off Fall Time tf 1.2 s VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6
Total Gate Charge Qg 4.3 nC VDS = 10V, ID = 5.4A, VGS = 4.5V
Gate-Source Charge Qgs 1.1 nC VDS = 10V, ID = 5.4A, VGS = 4.5V
Gate-Drain Charge Qgd 2.5 nC VDS = 10V, ID = 5.4A, VGS = 4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUN RATINGS
Drain-Source Diode Forward Current IS 5.4 A b
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 130 pF VDS = 10V, VGS = 0V, f = 1.0 MHz
Reverse Transfer Capacitance Crss 15 pF VDS = 10V, VGS = 0V, f = 1.0 MHz
Output Capacitance Coss 45 pF VDS = 10V, VGS = 0V, f = 1.0 MHz

2411200032_CET-Chino-Excel-Tech-CES2308_C83040.pdf

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