ChipNobo SI2309CDS T1 GE3 CN N channel MOSFET with continuous drain current of 2A in SOT 23 package
Key Attributes
Model Number:
SI2309CDS-T1-GE3-CN
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
RDS(on):
168mΩ@10V;185mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Reverse Transfer Capacitance (Crss@Vds):
18pF
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
450pF
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
SI2309CDS-T1-GE3-CN
Package:
SOT-23
Product Description
Product Overview
The SI2309CDS-T1-GE3-CN is a SOT-23 packaged N-channel MOSFET designed for various applications. It offers a continuous drain current of -2A and a pulsed drain current of -8A, with a maximum drain-source voltage of -60V. This device is suitable for use in residential and commercial equipment, providing reliable performance with its specified electrical characteristics and thermal management capabilities.
Product Attributes
- Brand: ChipNobo
- Product Marking: S09
- Package Type: SOT-23
- Origin: CN (implied by product marking)
Technical Specifications
| Symbol | Parameter | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDSS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | +20 | V | |||
| ID (at TA = 25C) | Drain Current (continuous) | -2 | A | |||
| IDM | Drain Current (pulsed) | -8 | A | |||
| PD(at TA = 25C) | Total Device Dissipation | 1500 | mW | |||
| RJA | Thermal Resistance Junction-Ambient | 83 | /W | |||
| TJ,Tstg | Junction/Storage Temperature | -55 | 150 | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | -60 | V | ID = -250uA, VGS=0V | ||
| VGS(th) | Gate Threshold Voltage | -1 | -1.65 | -2.4 | V | ID = -250uA, VGS= VDS |
| IDSS | Zero Gate Voltage Drain Current | 1 | uA | VGS=0V, VDS= -60V | ||
| IGSS | Gate Body Leakage | +100 | nA | VGS=+20V, VDS=0V | ||
| RDS(ON) | Static Drain-Source On-State Resistance | 168 | 185 | m | ID= -1.5A, VGS= -10V | |
| 220 | 270 | ID= -1.5A, VGS= -4.5V | ||||
| VSD | Diode Forward Voltage Drop | -1.2 | V | ISD= -1.5A, VGS=0V | ||
| CISS | Input Capacitance | 450 | pF | VGS=0V, VDS= -30V, f=1MHz | ||
| COSS | Common Source Output Capacitance | 20 | pF | VGS=0V, VDS= -30V, f=1MHz | ||
| CRSS | Reverse Transfer Capacitance | 18 | pF | VGS=0V, VDS= -30V, f=1MHz | ||
| Qg | Total Gate Charge | 11 | nC | VDS= -30V, ID= -1.5A, VGS= -10V | ||
| Qgs | Gate Source Charge | 3 | nC | VDS= -30V, ID= -1.5A, VGS= -10V | ||
| Qgd | Gate Drain Charge | 2 | nC | VDS= -30V, ID= -1.5A, VGS= -10V | ||
| td(on) | Turn-ON Delay Time | 40 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
| tr | Turn-ON Rise Time | 35 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
| td(off) | Turn-OFF Delay Time | 15 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
| tf | Turn-OFF Fall Time | 10 | ns | VDS= -30V ID= -1.5A, RGEN=3, VGS= -10V | ||
Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.050 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.900 | 1.00 | 0.035 | 0.039 |
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.500 | 0.600 | 0.020 | 0.024 |
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 | |
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-SI2309CDS-T1-GE3-CN_C42436847.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
