Power transistor ChipNobo TP65H070G4LSGB-TR-CN Gallium Nitride FET for reduced cooling requirements
Key Attributes
Model Number:
TP65H070G4LSGB-TR-CN
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
18.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
92mΩ
Gate Threshold Voltage (Vgs(th)):
3.65V
Reverse Transfer Capacitance (Crss@Vds):
3.6pF
Pd - Power Dissipation:
65.8W
Input Capacitance(Ciss):
818pF
Output Capacitance(Coss):
53pF
Gate Charge(Qg):
14.4nC
Mfr. Part #:
TP65H070G4LSGB-TR-CN
Package:
DFN-8(8x8)
Product Description
Product Overview
The TP65H070G4LSGB-TR-CN series FETs are hybrid normally-off Gallium Nitride (GaN) field effect transistors designed for high-efficiency and high-frequency power applications. They offer the strongest gate and the lowest reverse voltage drop among wide-band-gap devices, enabling simple gate drive, best-in-class performance, and outstanding reliability. Key benefits include very high conversion efficiencies, compact power supply designs due to higher frequency operation, end-product cost and size savings from reduced cooling, and improved safety and reliability through cooler operation temperatures. These FETs are ideal for half-bridge buck/boost, totem-pole PFC circuits, inverter circuits, and high-efficiency/high-frequency LLC or other soft-switching topologies.
Product Attributes
- Brand: ChipNobo
- Material: Gallium Nitride (GaN)
- Package Type: DFN 8x8 (mm)
- Part Number: TP65H070G4LSGB-TR-CN
- MSL Rating: 3
Technical Specifications
| Parameter | Value | Unit | Test Conditions |
|---|---|---|---|
| Drain-source maximum voltage (VDSS) | 650 | V | TJ = -55C to 150C |
| Drain-source maximum peak voltage, nonrepetitive (VDSS(PK), nonrepetitive) | 800 | V | Duty < 1%, spike duration < 30s |
| Drain-source maximum peak voltage, repetitive (VDSS(PK), repetitive) | 750 | V | Duty < 1%, spike duration < 30s |
| Gate-source maximum voltage (VGSS) | 20 | V | |
| Maximum power dissipation (PD) | 65.8 | W | TC = 25C |
| Maximum continuous drain current (IDS) | 18.9 | A | TC = 25C |
| Maximum continuous drain current (IDS) | 12 | A | TC = 100C |
| Maximum pulse drain current (IDS (pulse)) | 95 | A | TC = 25C, Pulse width = 10s |
| Operating junction temperature (TJ) | -55 to +150 | C | |
| Storage temperature (TS) | -55 to +150 | C | |
| Reflow soldering temperature (Tsold) | 260 | C | Reflow MSL3 |
| Junction-to-case thermal resistance (RJC) | 1.9 | C/W | Typ. |
| Junction-to-ambient thermal resistance (RJA) | 50 | C/W | Typ., Soldered on a PCB of 6cm metal area and 70m thickness |
| Drain-source maximum voltage (VDSS) | 650 | V | VGS = 0V |
| Gate threshold voltage (VGS(th)) | 3.2 - 4.1 | V | VDS = VGS, ID = 1.8mA |
| Drain-source on resistance (RDS(on)) | 92 - 110 | m | VGS = 10V, ID = 12A |
| Drain-source on resistance (RDS(on)) | 184 | m | VGS = 10V, ID = 12A, TJ = 150C |
| Drain-source leakage current (IDSS) | 2.5 - 25 | A | VDS = 650V, VGS = 0V |
| Drain-source leakage current (IDSS) | 5 | A | VDS = 650V, VGS = 0V, TJ = 150C |
| Gate-source leakage current (IGSS) | - 100 | nA | VGS = 20V |
| Gate-source leakage current (IGSS) | -100 - | nA | VGS = -20V |
| Input capacitance (Ciss) | 818 | pF | VGS = 0V, VDS = 400V, f = 500kHz |
| Output capacitance (Coss) | 53 | pF | VGS = 0V, VDS = 400V, f = 500kHz |
| Reverse transfer capacitance (Crss) | 3.6 | pF | VGS = 0V, VDS = 400V, f = 500kHz |
| Equivalent output capacitance (energy related) (Co(er)) | 78 | pF | VGS = 0V, VDS = 0V to 400V |
| Equivalent output capacitance (time related) (Co(tr)) | 139 | pF | VGS = 0V, VDS = 0V to 400V |
| Gate charge total (Qg) | 14.4 | nC | VDS = 400V, VGS = 0V to 10V, ID = 12A |
| Gate to source charge (Qgs) | 4.7 | nC | |
| Gate to drain charge (Qgd) | 5.2 | nC | |
| Output charge (Qoss) | 55.6 | nC | VGS = 0V, VDS = 0V to 400V |
| Turn-on delay time (td(on)) | 23 | ns | VDS = 400V, VGS = 0V to 12V, ID = 13A, RG = 36, ZFB = 120 @100MHz |
| Rise time (tr) | 7.1 | ns | |
| Turn-off delay time (td(off)) | 58 | ns | |
| Fall time (tf) | 7.5 | ns | |
| Reverse current (IS) | 12 | A | VGS = 0V, TC = 100C, 25% duty cycle |
| Reverse pulse current (IS (pulse)) | 35 | A | VGS = 0V, VSD = 6V, pulse width 10s, TJ = 150C |
| Reverse voltage (VSD) | 1.7 | V | VGS = 0V, IS = 12A |
| Reverse voltage (VSD) | 1.4 | V | VGS = 0V, IS = 8A |
| Reverse recovery time (trr) | 17.9 | ns | IS = 13A, VDD = 400V, di/dt = 1000A/s |
| Reverse recovery charge (Qrr) | <2.5 | nC |
2507091655_ChipNobo-TP65H070G4LSGB-TR-CN_C42436707.pdf
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