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quality power switching with Chongqing Pingwei Tech M4N65TF 4 Amp 650 Volt N CHANNEL MOSFET TO 220TF package factory
quality power switching with Chongqing Pingwei Tech M4N65TF 4 Amp 650 Volt N CHANNEL MOSFET TO 220TF package factory

power switching with Chongqing Pingwei Tech M4N65TF 4 Amp 650 Volt N CHANNEL MOSFET TO 220TF package

Key Attributes
Model Number: M4N65TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
434pF@25V
Pd - Power Dissipation:
34W
Gate Charge(Qg):
17nC@50V
Mfr. Part #:
M4N65TF
Package:
TO-220TF-3
Product Description

Product Overview

The M4N65TF is a 4 Amp, 650 Volt N-CHANNEL MOSFET designed for efficient power switching applications. It features low gate charge, low Ciss, and fast switching capabilities, making it suitable for demanding electronic designs. This MOSFET is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and performance. It is housed in a TO-220TF package.

Product Attributes

  • Type: N-CHANNEL MOSFET
  • Package: TO-220TF

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Units
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS 30 V
Continuous Drain Current ID 4 A
Pulsed Drain Current (Note1) IDM 16 A
Single Pulse Avalanche Energy (Note 2) EAS 150 mJ
Reverse Diode dV/dt (Note 3) dv/dt 2.63 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 +150
Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260
Mounting Torque 6-32 or M3 screw 1.1 Nm
Thermal Characteristics
Maximum Junction-to-Case RthJC 3.47 /W
Maximum Power Dissipation PD TC=25 34 W
Electrical Characteristics (Tc=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 650 - - V
Breakdown Temperature Coefficient BVDSS /TJ Reference to 25, ID=250uA - 0.67 - V/
Zero Gate Voltage Drain Current IDSS VDS=650V,VGS=0V - - 1 A
Gate-Body Leakage Current, Forward IGSSF VGS=30V,VDS=0V - - 100 nA
Gate-Body Leakage Current, Reverse IGSSR VGS=-30V,VDS=0V - - -100 nA
Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 - 4 V
Drain-Source On-State Resistance RDS(on) VGS=10V,ID=2A - 2.0 2.3
Input Capacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ - 434 - pF
Output Capacitance Coss - 60 - pF
Reverse Transfer Capacitance Crss - 6 - pF
Turn-On Delay Time td(on) VDD=30V,ID=0.5A, RG=25,VGS=10V (Note3,4) - 44 - ns
Turn-On Rise Time tr - 50 - ns
Turn-Off Delay Time td(off) - 80 - ns
Turn-Off Fall Time tf - 45 - ns
Total Gate Charge Qg VDS=50V,ID=1.3A, VGS=10V(Note3,4) - 17 - nC
Gate-Source Charge Qgs - 4.9 - nC
Gate-Drain Charge Qgd - 3.7 - nC
Drain-Source Body Diode Characteristics and Maximum Ratings
Diode Forward Voltage VSD IS=4A,VGS=0V - - 1.5 V
Reverse Recovery Time trr VGS=0V,IS=4A,Tj=25 dIF/dt=100A/us(Note3) - 415 - ns
Reverse Recovery Charge Qrr - 2.1 - C

Package Dimensions

Dimension Min Max
A .590(15.0) .650(16.5)
B .393(10.0) .414(10.5)
C .118(3.00) .138(3.50)
D .118(3.00) .146(3.70)
E .512(13.0) .551(14.0)
F .028(0.70) .035(0.90)
G .114(2.90) .138(3.50)
H .255(6.50) .280(7.10)
I .173(4.40) .197(5.00)
J .102(2.60) .110(2.80)
K .018(0.45) .026(0.65)
L .092(2.35) .109(2.75)
P .890(2.25) .113(2.85)

2410122020_Chongqing-Pingwei-Tech-M4N65TF_C432681.pdf

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