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quality NPN Epitaxial Planar Die Transistor Comchip MMBT3904-HF RoHS Halogen Free General Purpose factory
quality NPN Epitaxial Planar Die Transistor Comchip MMBT3904-HF RoHS Halogen Free General Purpose factory

NPN Epitaxial Planar Die Transistor Comchip MMBT3904-HF RoHS Halogen Free General Purpose

Key Attributes
Model Number: MMBT3904-HF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904-HF
Package:
SOT-23
Product Description

Product Overview

The MMBT3904-HF is an NPN epitaxial planar die construction general-purpose transistor. It is designed as a complementary type to the PNP transistor, with the MMBT3904-HF being recommended. This RoHS and Halogen-Free device is suitable for various electronic applications requiring reliable transistor performance.

Product Attributes

  • Brand: Comchip Technology
  • Device Type: NPN Epitaxial Planar Die Construction Transistor
  • Certifications: RoHS, Halogen Free
  • Package Type: SOT-23

Technical Specifications

Symbol Parameter Conditions Min Max Unit
Maximum Ratings (at TA=25C unless otherwise noted)
VCBO Collector-Base voltage -55 V
VCEO Collector-Emitter voltage 40 V
VEBO Emitter-Base voltage 6 V
IC Collector current-Continuous 0.2 A
PC Collector dissipation 0.2 W
RJA Thermal resistance, junction to ambient 625 C/W
TSTG, TJ Storage temperature and junction temperature +150 C
Electrical Characteristics (at TA=25C unless otherwise noted)
V(BR)CBO Collector-Base breakdown voltage IC =100A , IE=0 40 V
V(BR)CEO Collector-Emitter breakdown voltage IC =1mA , IB=0 60 V
V(BR)EBO Emitter-Base breakdown voltage IE =100A , IC=0 6 V
ICBO Collector cut-off current VCB=60V , IE=0 50 nA
ICEX Collector cut-off current VCE=30V , VBE(off)=3V 0.1 A
IEBO Emitter cut-off current VEB=5V , IC=0 0.1 A
hFE(1) DC current gain VCE=1V , IC=10mA 400
hFE(2) DC current gain VCE=1V , IC=50mA 100
VCE(sat) Collector-Emitter saturation voltage IC=50mA , IB=5mA 0.3 V
VBE(sat) Base-Emitter saturation voltage IC=50mA , IB=5mA 0.95 V
fT Transition frequency VCE=20V , IC=10mA, f=100MHz 300 MHz
td Delay time VCC=3.0V , VBE=-0.5V, IC=10mA , IB1=1.0mA 35 nS
ts Storage time VCC=3.0V , IC=10mA, IB1=IB2=1.0mA 200 nS
tr Rise time 35 nS
tf Fall time 50 nS
Symbol Dimensions (mm) Dimensions (inch)
A 3.10 0.10 0.122 0.004
B 2.85 0.10 0.112 0.004
C 1.55 0.10 0.061 0.004
D 1.75 0.10 0.069 0.004
D1 1.40 0.10 0.055 0.004
D2 1.05 0.10 0.041 0.004
E 0.512 0.008 0.020 0.0003
F 0.10 0.05 0.004 0.002
P 4.00 0.10 0.157 0.004
P0 2.00 0.05 0.079 0.002
P1 8.00 0.30 0.315 0.012
W 13.0 0.20 0.512 0.008
W1 7.00 0.20 0.276 0.008
Park Number Marking Code Case Type Qty per Reel (Pcs) Reel Size (inch)
MMBT3904-HF 1AM SOT-23 3000 7

2410121811_Comchip-MMBT3904-HF_C3200072.pdf

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