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quality Plastic Encapsulated Schottky Diode Chao He SD103AWS with Guard Ring Construction and Low Capacitance factory
quality Plastic Encapsulated Schottky Diode Chao He SD103AWS with Guard Ring Construction and Low Capacitance factory

Plastic Encapsulated Schottky Diode Chao He SD103AWS with Guard Ring Construction and Low Capacitance

Key Attributes
Model Number: SD103AWS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
1 Independent
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
350mA
Mfr. Part #:
SD103AWS
Package:
SOD-323
Product Description

Product Overview

The CHAOHE MICROELECTRONICS CO., LTD. SD103AWS thru SD103CWS series are Schottky barrier diodes encapsulated in a small SOD-323 surface-mounted device (SMD) plastic package. These diodes are designed for general purpose switching applications and are ideally suited for automatic insertion. Key features include a low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low capacitance. They are available in various reverse voltage ratings, making them versatile for a range of electronic designs.

Product Attributes

  • Brand: CHAOHE MICRO ELECTRONICS CO., LTD.
  • Package Type: SOD-323
  • Encapsulation: Plastic
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Construction: Guard Ring for Transient Protection
  • Mounting: Surface Mount Device (SMD)
  • Insertion: Ideally Suited for Automatic Insertion

Technical Specifications

Model Peak Repetitive Peak Reverse Voltage (VRRM) Working Peak Reverse Voltage (VRWM) DC Blocking Voltage (VR) RMS Reverse Voltage (VR(RMS)) Forward Continuous Current (IFM) Non-repetitive Peak Forward Surge Current (@t=8.3ms, IFSM) Power Dissipation (Pd) Reverse Breakdown Voltage (V(BR)R) Forward Voltage (VF) Reverse Current (IRM) Capacitance (CT) Reverse Recovery Time (trr)
SD103AWS 40 V 30 V 40 V 28 V 350 mA 2.0 A 200 mW 40 V (IR=100A) 0.37 V (IF=20mA) / 0.60 V (IF=200mA) 5.0 A (VR=30V) 50 pF (VR=0V, f=1.0MHz) 10 ns (IF=IR=200mA, Irr=0.1XIR, RL=100)
SD103BWS 30 V 21 V 30 V 21 V 350 mA 2.0 A 200 mW 30 V (IR=100A) 0.37 V (IF=20mA) / 0.60 V (IF=200mA) 5.0 A (VR=20V) 50 pF (VR=0V, f=1.0MHz) 10 ns (IF=IR=200mA, Irr=0.1XIR, RL=100)
SD103CWS 20 V 14 V 20 V 14 V 350 mA 2.0 A 200 mW 20 V (IR=100A) 0.37 V (IF=20mA) / 0.60 V (IF=200mA) 5.0 A (VR=10V) 50 pF (VR=0V, f=1.0MHz) 10 ns (IF=IR=200mA, Irr=0.1XIR, RL=100)
Parameter Symbol Min Nom Max Unit
Dimensions A 0.95 1.0 1.05 mm
A1 0.0 0.05 0.1 mm
A2 0.85 0.90 0.95 mm
A3 0.35 0.40 0.45 mm
b 0.30 0.35 0.40 mm
c 0.127 0.131 0.135 mm
D 1.20 1.25 1.30 mm
Dimensions E 2.50 2.65 2.80 mm
E1 1.65 1.70 1.75 mm
L 0.20 0.30 0.40 mm
Dimensions L1 0.45 0.65 mm
Angle 0o 3o 8o
Thermal Resistance (Junction to Ambient) RJA 500 /W
Junction Temperature Tj -40 +125
Storage Temperature Tstg -55 +150
Packing Quantity per reel Reel size Marking Code
Tape & Reel 3,000 pcs 7 inches S4 (SD103AWS), S5 (SD103BWS), S6 (SD103CWS)

2509251450_Chao-He-SD103AWS_C51953486.pdf

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