ChipNobo STP4N150 CN N channel MOSFET featuring fast recovery diode and lead free halogen free design
Key Attributes
Model Number:
STP4N150-CN
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
3A
RDS(on):
5.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Pd - Power Dissipation:
115W
Input Capacitance(Ciss):
1.6nF
Output Capacitance(Coss):
100pF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
STP4N150-CN
Package:
TO-220C
Product Description
Product Overview
The ChipNobo STP4N150-CN is a high-performance N-channel MOSFET designed for various power applications. It features a low on-state resistance of 5.4 at VGS=10V, a fast recovery body diode for improved efficiency, and is RoHS compliant, lead-free, and halogen-free. This device is well-suited for use in adaptors, chargers, and SMPS standby power supplies, offering reliable performance and robust characteristics.
Product Attributes
- Brand: ChipNobo
- Certifications: RoHS Compliant, Lead-Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Note or Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Device Type | STP4N150-CN | |||||
| Device Marking | P5K4RN150H | |||||
| Package | TO-220C | |||||
| SPQ (Standard Packing Quantity) | 50/Tube | |||||
| MPQ (Minimum Packing Quantity) | 1000/Box | |||||
| MOQ (Minimum Order Quantity) | 5000/Carton | |||||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Thermal Resistance, Junction-Case | Rth(j-c) | 1.06 | C/W | |||
| Drain-Source Voltage | VDS | 1500 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | @TC=25 | 3.0 | A | ||
| Peak Drain Current | IDM | VGS=10V | 12 | A | ||
| Power Dissipation | PD | 115 | W | |||
| Single Pulse Avalanche Energy | EAS | L=30mH | 500 | mJ | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V, ID=250A | 1500 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=1500V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=1200V, VGS=0V, TJ=125C | 500 | A | ||
| Gate-Source Leakage Current | IGSS | VGS=+30V, VDS=0V | +100 | nA | ||
| Gate-Source Leakage Current | IGSS | VGS=-30V, VDS=0V | -100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | 4.5 | V | |
| Drain-Source on-state resistance | RDS(on) | VGS=10V, ID=2A | 5.4 | 8.2 | ||
| Internal Gate Resistance | RG(int) | f=1MHz | ||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 1600 | pF | ||
| Output Capacitance | Coss | 100 | pF | |||
| Reverse Transfer Capacitance | Crss | 33 | pF | |||
| Forward Transconductance | gfs | VDS=15V, ID=3A | 3.0 | S | ||
| Gate input resistance | Rg | f=1MHz, Gate DC Bias=0, Test signal level=20mV open drain | 4.5 | |||
| Total Gate Charge | Qg | VDD=750V, ID=3A, VGS=0 to 10V | 36 | nC | ||
| Gate-Source Charge | Qgs | 9.5 | ||||
| Gate-Drain Charge | Qgd | 12 | ||||
| Turn-on delay time | td(on) | VDD=750V, ID=3A, VGS=10V, Rg=4.7 | 25 | ns | ||
| Rise Time | tr | 48 | ||||
| Turn-off delay time | Td(off) | 57 | ||||
| Fall time | tf | 52 | ||||
| Operating junction temperature | Tvj | -55 | +150 | C | ||
| Diode forward voltage | VSD | VGS=0V, ISD=1A | 1.2 | V | ||
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | 3 | A | ||
| Pulsed Source Current | ISM | 12 | A | |||
| Reverse Recovery Time | trr | VGS=0V, IF=3A, di/dt=100A/s | 255 | ns | ||
| Reverse Recovery Charge | Qrr | 1.1 | uC |
2507091655_ChipNobo-STP4N150-CN_C42436710.pdf
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