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quality Power MOSFET ChipNobo BSS138-7-F-CN TrenchFET SOT23 Package Load Switching Portable Applications factory
quality Power MOSFET ChipNobo BSS138-7-F-CN TrenchFET SOT23 Package Load Switching Portable Applications factory

Power MOSFET ChipNobo BSS138-7-F-CN TrenchFET SOT23 Package Load Switching Portable Applications

Key Attributes
Model Number: BSS138-7-F-CN
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
RDS(on):
6Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
27pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
BSS138-7-F-CN
Package:
SOT-23
Product Description

Product Overview

This TrenchFET Power MOSFET is designed for load switching in portable devices and DC/DC converters. It features a SOT-23 package and is suitable for any mounting position. The material is Epoxy with a UL 94V-0 flammability rating.

Product Attributes

  • Brand: ChipNobo (implied by notice and website reference)
  • Package Type: SOT-23
  • Flammability Rating: Epoxy UL 94V-0
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Value Unit Test Condition
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 0.22 A
Power Dissipation PD 350 mW
Junction Temperature Tj 150
Storage Temperature Tstg -50-+150
Thermal Resistance From Junction to Ambient θJA 357 /W
Electrical Characteristics (TA = 25 unless otherwise specified)
Drain-Source Breakdown Voltage V(BR)DSS 50 V VGS=0V, ID=250µA
Gate-Threshold voltage (note1) VGS(th) 1.5 V VDS=VGS, ID=1mA
Gate-Threshold voltage (Typ) VGS(th) 0.8 V VDS=VGS, ID=1mA
Gate-body Leakage IGSS ±100 nA VDS=0V, VGS=±20V
Zero Gate Voltage Drain current IDSS 0.5 µA VDS=50V, VGS=0V
Zero Gate Voltage Drain current IDSS 0.1 µA VDS=30V, VGS=0V
Drain Source On Resistance RDS(ON) 3.5 Ω VGS=10V, ID=0.22A
Drain Source On Resistance RDS(ON) 6 Ω VGS=4.5V, ID=0.22A
Forward trans conductance (note1) gfs 0.12 S VDS=10V, ID=0.22A
Diode forward voltage (note1) VSD 1.4 V IS=0.44A, VGS=0V
Dynamic (note2)
Input capacitance Ciss 27 pF VDS=25V, VGS=0V, f=1MHz
Output capacitance Coss 13 pF
Reverse Transfer capacitance Crss 6 pF
Switching (note1,2)
Turn-on Time td(on) 5 ns VDD=30V, RGEN=6Ω, VDS=10V, ID≈0.29A
Rise time tr 18 ns
Turn-off Time td(off) 36 ns
Fall time tf 14 ns

Notes:
a. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.
b. These parameters have no way to verify.

For additional information, please visit http://www.chipnobo.com.


2507091655_ChipNobo-BSS138-7-F-CN_C42419970.pdf

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