power transistor ChipNobo IRF1404PBF-CN featuring low RDS ON and fast recovery diode for converters

Key Attributes
Model Number: IRF1404PBF-CN
Product Custom Attributes
Mfr. Part #:
IRF1404PBF-CN
Package:
TO-220
Product Description

Product Overview

This product features proprietary new planar technology, offering a typical RDS(ON) of 3.5m at VGS=10V. Its low gate charge minimizes switching loss, and it includes a fast recovery body diode. Ideal for DC-DC converters, DC-AC inverters, and power supplies.

Product Attributes

  • Brand: ChipNobo
  • Package: TO-220

Technical Specifications

Parameter Symbol Unit Test Conditions Min. Typ. Max.
General Features
RDS(ON) m VGS=10V 3.5 4.0
Absolute Maximum Ratings
Drain-to-Source Voltage VDSS V TC=25 unless otherwise specified 40
Gate-to-Source Voltage VGSS 20
Continuous Drain Current ID A TC=25 unless otherwise specified 162
Continuous Drain Current ID A TC=100 115
Pulsed Drain Current IDM A at VGS=10V 650
Single Pulse Avalanche Energy EAS mJ 520
Power Dissipation PD W 203
Derating Factor above 25 W/ 1.62
Maximum Temperature for Soldering Leads TL at 0.063in (1.6mm) from Case for 10 seconds 300
Maximum Temperature for Soldering Package Body for 10 seconds 260
Operating and Storage Temperature Range TJ & TSTG -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RJC /W 0.62
Thermal Resistance, Junction-to-Ambient RJA /W 62
Electrical Characteristics
Drain-to-Source Breakdown Voltage VDSS V VGS=0V, ID=250uA 40
Drain-to-Source Leakage Current IDSS uA VDS=40V, VGS=0V 20
Gate-to-Source Leakage Current IGSS nA VGS=+20V, VDS=0V +200
Gate-to-Source Leakage Current IGSS nA VGS=-20V, VDS=0V -200
Static Drain-to-Source On-Resistance RDS(ON) m VGS=10V, ID=16A 3.5 4.0
Gate Threshold Voltage VGS(TH) V VDS=VGS, ID=250uA 4.0
Dynamic Characteristics
Input Capacitance Ciss pF VGS=0V, VDS=25V, f=1.0MHz 3755
Reverse Transfer Capacitance Crss pF 408.2
Output Capacitance Coss pF 1525
Total Gate Charge Qg nC VDD=32V, ID=95A, VGS=0 to 10V 88.3
Gate-to-Source Charge Qgs 16.2
Gate-to-Drain (Miller) Charge Qgd 38.1
Resistive Switching Characteristics
Turn-on Delay Time td(ON) ns VDD=20V, ID=95A, VGS= 10V, RG=2.5 43.28
Rise Time trise 217.8
Turn-Off Delay Time td(OFF) ns 222.3
Fall Time tfall 201.6
Source-Drain Body Diode Characteristics
Continuous Source Current IS A 162
Pulsed Source Current ISM A 650
Diode Forward Voltage VSD V IS=95A, VGS=0V 1.3
Reverse recovery time trr ns VGS=0V ,IF=95A, diF/dt=100A/s 70
Reverse recovery charge Qrr nC 0.15

2507091655_ChipNobo-IRF1404PBF-CN_C42436714.pdf

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