power transistor ChipNobo IRF1404PBF-CN featuring low RDS ON and fast recovery diode for converters
Key Attributes
Model Number:
IRF1404PBF-CN
Product Custom Attributes
Mfr. Part #:
IRF1404PBF-CN
Package:
TO-220
Product Description
Product Overview
This product features proprietary new planar technology, offering a typical RDS(ON) of 3.5m at VGS=10V. Its low gate charge minimizes switching loss, and it includes a fast recovery body diode. Ideal for DC-DC converters, DC-AC inverters, and power supplies.
Product Attributes
- Brand: ChipNobo
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Unit | Test Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| General Features | ||||||
| RDS(ON) | m | VGS=10V | 3.5 | 4.0 | ||
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | V | TC=25 unless otherwise specified | 40 | ||
| Gate-to-Source Voltage | VGSS | 20 | ||||
| Continuous Drain Current | ID | A | TC=25 unless otherwise specified | 162 | ||
| Continuous Drain Current | ID | A | TC=100 | 115 | ||
| Pulsed Drain Current | IDM | A | at VGS=10V | 650 | ||
| Single Pulse Avalanche Energy | EAS | mJ | 520 | |||
| Power Dissipation | PD | W | 203 | |||
| Derating Factor above 25 | W/ | 1.62 | ||||
| Maximum Temperature for Soldering Leads | TL | at 0.063in (1.6mm) from Case for 10 seconds | 300 | |||
| Maximum Temperature for Soldering Package Body | for 10 seconds | 260 | ||||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | /W | 0.62 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | /W | 62 | |||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | VDSS | V | VGS=0V, ID=250uA | 40 | ||
| Drain-to-Source Leakage Current | IDSS | uA | VDS=40V, VGS=0V | 20 | ||
| Gate-to-Source Leakage Current | IGSS | nA | VGS=+20V, VDS=0V | +200 | ||
| Gate-to-Source Leakage Current | IGSS | nA | VGS=-20V, VDS=0V | -200 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | m | VGS=10V, ID=16A | 3.5 | 4.0 | |
| Gate Threshold Voltage | VGS(TH) | V | VDS=VGS, ID=250uA | 4.0 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | pF | VGS=0V, VDS=25V, f=1.0MHz | 3755 | ||
| Reverse Transfer Capacitance | Crss | pF | 408.2 | |||
| Output Capacitance | Coss | pF | 1525 | |||
| Total Gate Charge | Qg | nC | VDD=32V, ID=95A, VGS=0 to 10V | 88.3 | ||
| Gate-to-Source Charge | Qgs | 16.2 | ||||
| Gate-to-Drain (Miller) Charge | Qgd | 38.1 | ||||
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(ON) | ns | VDD=20V, ID=95A, VGS= 10V, RG=2.5 | 43.28 | ||
| Rise Time | trise | 217.8 | ||||
| Turn-Off Delay Time | td(OFF) | ns | 222.3 | |||
| Fall Time | tfall | 201.6 | ||||
| Source-Drain Body Diode Characteristics | ||||||
| Continuous Source Current | IS | A | 162 | |||
| Pulsed Source Current | ISM | A | 650 | |||
| Diode Forward Voltage | VSD | V | IS=95A, VGS=0V | 1.3 | ||
| Reverse recovery time | trr | ns | VGS=0V ,IF=95A, diF/dt=100A/s | 70 | ||
| Reverse recovery charge | Qrr | nC | 0.15 | |||
2507091655_ChipNobo-IRF1404PBF-CN_C42436714.pdf
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