High Gain NPN Power Transistor DIODES FCX690BTA with 6A Peak Pulse Current and RoHS Compliant Material
Key Attributes
Model Number:
FCX690BTA
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FCX690BTA
Package:
SOT-89
Product Description
Product Overview
The FCX690B is a high-gain NPN power transistor designed for various applications requiring robust performance. It features a high continuous collector current of 2A and a peak pulse current of up to 6A, along with a low saturation voltage for efficient operation. This device is AEC-Q101 qualified, ensuring high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: Diodes Incorporated
- Material: Molded plastic ("Green" molding compound)
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), AEC-Q101 Standards
- Lead-Free Finish: Yes
Technical Specifications
| Characteristic | Symbol | Limit/Value | Unit | Test Condition |
| Features | ||||
| Breakdown Voltage Collector-Emitter | BVCEO | > 45 | V | |
| Continuous Collector Current | IC | 2 | A | |
| Peak Pulse Current | ICM | up to 6 | A | |
| High Gain | hFE | > 400 | @ 1A | |
| Power Dissipation | 2 | W | ||
| Low Saturation Voltage | VCE(sat) | < 300 | mV | @ 1A |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 45 | V | @TA = +25C, unless otherwise specified. |
| Collector-Emitter Voltage | VCEO | 45 | V | @TA = +25C, unless otherwise specified. |
| Emitter-Base Voltage | VEBO | 7 | V | @TA = +25C, unless otherwise specified. |
| Continuous Collector Current | IC | 2 | A | @TA = +25C, unless otherwise specified. |
| Peak Pulse Current | ICM | 6 | A | @TA = +25C, unless otherwise specified. |
| Base Current | IB | 500 | mA | @TA = +25C, unless otherwise specified. |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 1 (Note 5) / 2 (Note 6) | W | @TA = +25C, unless otherwise specified. |
| Thermal Resistance, Junction to Ambient Air | RJA | 125 (Note 5) / 62.5 (Note 6) | C/W | @TA = +25C, unless otherwise specified. |
| Thermal Resistance, Junction to Leads | RJL | 5.31 | C/W | @TA = +25C, unless otherwise specified. |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 8,000 | V | JEDEC Class 3B |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 45 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 45 | V | IC = 10mA (Note 9) |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 35V |
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 5.6V |
| DC current transfer ratio (hFE) | hFE | 500 (IC=100mA, VCE=2V) / 400 (IC=1A, VCE=2V) / 150 (IC=2A, VCE=2V) | (Note 9) | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 80 (IC=0.1A, IB=0.5mA) / 300 (IC=1A, IB=5mA) | mV | (Note 9) |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC = 1A, IB = 10mA (Note 9) |
| Base-Emitter Turn-on Voltage | VBE(on) | 0.85 | V | IC = 1A, VCE = 2V (Note 9) |
| Transitional Frequency | fT | 150 | MHz | IC = 50mA, VCE = 5V, f = 50MHz |
| Input capacitance | Cibo | 200 | pF | VEB = 0.5V, f = 1MHz |
| Output capacitance | Cobo | 16 | pF | VCB = 10V, f = 1MHz |
| Switching times (ton) | ton | 33 | ns | IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA |
| Switching times (toff) | toff | 1300 | ns | |
1912111437_DIODES-FCX690BTA_C460072.pdf
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