40V PNP medium power transistor DIODES ZXTP25040DFHTA in compact SOT23 package for MOSFET and IGBT gate drive
Key Attributes
Model Number:
ZXTP25040DFHTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
1nA
Pd - Power Dissipation:
1.25W
Transition Frequency(fT):
270MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTP25040DFHTA
Package:
SOT-23
Product Description
Product Overview
The ZXTP25040DFH is a 40V PNP medium power transistor in a SOT23 package. It offers high power dissipation, high peak current, and low saturation voltage, making it suitable for applications such as MOSFET and IGBT gate driving, DC-DC converters, motor drives, and high-side drivers. This device is complementary to the ZXTN25040DFH and is available in a totally lead-free and fully RoHS compliant package.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, Green Molding Compound
- Color: "Green" Device
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, Qualified to JEDEC standards
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Features | ||||
| Breakdown Voltage Collector-Emitter (Forward Blocking) | BVCEO | -40 | V | |
| Breakdown Voltage Emitter-Collector (Reverse Blocking) | BVECO | -3 | V | |
| Continuous Collector Current | IC | -3 | A | |
| Collector-Emitter Saturation Voltage | VCE(sat) | < -85 | mV | @ -1A |
| Collector-Emitter Saturation Resistance | RCE(sat) | 55 | m | typical |
| Power Dissipation | PD | 1.25 | W | |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -45 | V | @ TA = +25C |
| Collector-Emitter Voltage (Forward Blocking) | VCEO | -40 | V | @ TA = +25C |
| Emitter-collector voltage (Reverse Blocking) | VECO | -3 | V | @ TA = +25C |
| Emitter-Base Voltage | VEBO | -7 | V | @ TA = +25C |
| Continuous Collector Current | IC | -3 | A | @ TA = +25C |
| Peak Pulse Current | ICM | -9 | A | @ TA = +25C |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 1.25 | W | @ TA = +25C (Note 9) |
| Thermal Resistance, Junction to Ambient | RJA | 69 | C/W | (Note 9) |
| Thermal Resistance, Junction to Lead | RJL | 74.95 | C/W | (Note 10) |
| Thermal Resistance, Junction to Case | RJC | 45 | C/W | (Note 11) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -45 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Emitter-Collector Breakdown Voltage | BVECO | -3 | V | IE = -100A |
| Collector-Base Cutoff Current | ICBO | < -1 | nA | VCB = -45V |
| Collector-Base Cutoff Current | ICBO | -0.5 | A | VCB = -45V, Tamb = +100C |
| Emitter-Base Cutoff Current | IEBO | < -1 | nA | VEB = -5.6V |
| Static Forward Current Transfer Ratio | hFE | 300 | - | IC = -10mA, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 200 | - | IC = -1A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 30 | - | IC = -3A, VCE = -2V |
| Collector-Emitter Saturation Voltage | VCE(sat) | -170 | mV | IC = -1A, IB = -20mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -65 | mV | IC = -1A, IB = -100mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -165 | mV | IC = -3A, IB = -300mA |
| Base-Emitter Saturation Voltage | VBE(sat) | -930 | mV | IC = -3A, IB = -300mA |
| Base-Emitter Voltage | VBE(on) | -830 | mV | IC = -3A, VCE = -2V |
| Output Capacitance | Cobo | 17.4 | pF | VCB = -10V, f = 1MHz |
| Transition Frequency | fT | 270 | MHz | VCE = -10V, IC = -50mA, f = 100MHz |
| Turn-on Time | t(on) | 75.5 | ns | VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA |
| Turn-off Time | t(off) | 320 | ns | VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA |
2412251027_DIODES-ZXTP25040DFHTA_C211430.pdf
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