Switching Amplification Transistor Diodes FZT605TA NPN Darlington with High Gain and RoHS Compliance
Key Attributes
Model Number:
FZT605TA
Product Custom Attributes
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
2W
DC Current Gain:
2000
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
120V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
FZT605TA
Package:
SOT-223
Product Description
Diodes Incorporated FZT605 NPN Darlington Transistor
The Diodes Incorporated FZT605 is a high-performance NPN Darlington transistor designed for various switching and amplification applications. It offers a high continuous collector current of 1.5A and a significant voltage rating of 120V CEO, making it suitable for driving loads such as lamps, relays, and solenoids. Key advantages include its high gain (hFE > 2k @ 1A) and lead-free, RoHS-compliant construction, aligning with environmental standards.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223 (Type DN)
- Material: Molded Plastic, "Green" Molding Compound
- Color: "Green" Device (Halogen and Antimony Free)
- Certifications: RoHS Compliant
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 140 | - | - | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 120 | - | - | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 14 | - | - | V | IE = 100A |
| Collector-Base Cut-Off Current | ICBO | - | - | 100 | nA | VCB = 120V |
| Collector-Base Cut-Off Current | ICBO | - | - | 10 | A | VCB = 120V, TA = +120C |
| Collector-Emitter Cut-Off Current | ICES | - | - | 100 | nA | VCE = 120V |
| Emitter Cut-Off Current | IEBO | - | - | 100 | nA | VEB = 8V |
| DC Current Gain | hFE | 2,000 | 5,000 | - | - | IC = 50mA, VCE = 5V |
| DC Current Gain | hFE | 2,000 | - | - | - | IC = 1A, VCE = 5V |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | V | IC = 250mA, IB = 0.25mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1.5 | V | IC = 1A, IB = 1mA |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.8 | V | IC = 1A, IB = 1mA |
| Base-Emitter Turn-On Voltage | VBE(on) | - | - | 1.7 | V | IC = 1A, VCE = 5V |
| Input Capacitance | Cibo | - | 90 | - | pF | VEB = 0.5V, f = 1MHz |
| Output Capacitance | Cobo | - | 15 | - | pF | VCB = 10V, f = 1MHz |
| Current Gain-Bandwidth Product | fT | 150 | - | - | MHz | VCE = 10V, IC = 100mA, f = 20MHz |
| Turn-On Time | ton | - | 0.5 | - | s | VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA |
| Turn-Off Time | toff | - | 1.6 | - | s | VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA |
2412251006_DIODES-FZT605TA_C155225.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
