High Current PNP Transistor DIODES FZT788BTA with Low RCE Saturation and RoHS Compliant Green Package
Key Attributes
Model Number:
FZT788BTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
15V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FZT788BTA
Package:
SOT-223
Product Description
Product Overview
The FZT788B is a 15V PNP medium power, high gain transistor in a SOT223 package. It offers high continuous current capability (IC = -3A), excellent DC current gain (hFE > 300 @ -2A), and very low saturation voltage. Its extremely low equivalent on-resistance (RCE(sat) 93m at -3A) makes it suitable for applications requiring efficient power handling. The FZT788B is a lead-free, RoHS compliant, and halogen/antimony-free ("Green") device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223
- Package Material: Molded Plastic, "Green" Molding Compound; UL Flammability Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208
- Weight: 0.112 grams (Approximate)
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Complementary NPN Type: DIODES FZT688B
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -15 | V | |
| Collector-Emitter Voltage | VCEO | -15 | V | |
| Emitter-Base Voltage | VEBO | -7 | V | |
| Continuous Collector Current | IC | -3 | A | |
| Peak Pulse Current | ICM | -8 | A | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 3 | W | Mounted on 50mm x 50mm 2oz copper FR4 PCB, still air |
| Power Dissipation (Note 6) | PD | 2 | W | Mounted on 25mm x 25mm 2oz copper FR4 PCB, still air |
| Power Dissipation (Note 7) | PD | 1.6 | W | Mounted on 25mm x 25mm 1oz copper FR4 PCB, still air |
| Power Dissipation (Note 8) | PD | 1.2 | W | Mounted on minimum recommended pad layout FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 41.7 | C/W | Mounted on 50mm x 50mm 2oz copper FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 62.5 | C/W | Mounted on 25mm x 25mm 2oz copper FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient (Note 7) | RJA | 78.1 | C/W | Mounted on 25mm x 25mm 1oz copper FR4 PCB, still air |
| Thermal Resistance, Junction to Ambient (Note 8) | RJA | 104 | C/W | Mounted on minimum recommended pad layout FR4 PCB, still air |
| Thermal Resistance Junction to Lead (Note 9) | RJL | 12.9 | C/W | At the end of the collector lead |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -15 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage (Note 11) | BVCEO | -15 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector-Base Cut-Off Current | ICBO | -100 | nA | VCB = -10V |
| Emitter Cut-Off Current | IEBO | -100 | nA | VEB = -4V |
| DC Current Gain (Note 11) | hFE | 500 | IC = -10mA, VCE = -2V | |
| DC Current Gain (Note 11) | hFE | 400 | IC = -1A, VCE = -2V | |
| DC Current Gain (Note 11) | hFE | 300 | IC = -2A, VCE = -2V | |
| Collector-Emitter Saturation Voltage (Note 11) | VCE(sat) | -0.15 | V | IC = -0.5A, IB = -2.5mA |
| Collector-Emitter Saturation Voltage (Note 11) | VCE(sat) | -0.25 | V | IC = -1A, IB = -5mA |
| Collector-Emitter Saturation Voltage (Note 11) | VCE(sat) | -0.45 | V | IC = -2A, IB = -10mA |
| Collector-Emitter Saturation Voltage (Note 11) | VCE(sat) | -0.5 | V | IC =- 3A, IB = -50mA |
| Base-Emitter Saturation Voltage (Note 11) | VBE(sat) | -0.9 | V | IC = -1A, IB = -5mA |
| Base-Emitter Turn-On Voltage (Note 11) | VBE(on) | -0.75 | V | IC = -1A, VCE = -2V |
| Input Capacitance | Cibo | 225 | pF | VEB = -0.5V, f = 1MHz |
| Output Capacitance | Cobo | 25 | pF | VCB = -10V, f = 1MHz |
| Current Gain-Bandwidth Product | fT | 100 | MHz | VCE = -5V, IC = -50mA, f=50MHz |
| Turn-On Time | ton | 35 | ns | VCC = -10V, IC = -500mA, IB1 = -IB2 = -50mA |
| Turn-Off Time | toff | 400 | ns | VCC = -10V, IC = -500mA, IB1 = -IB2 = -50mA |
2412251002_DIODES-FZT788BTA_C141330.pdf
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