High Current PNP Transistor DIODES FZT753TA in SOT223 Package Suitable for Automotive Circuits and Performance
Key Attributes
Model Number:
FZT753TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
1nA
Pd - Power Dissipation:
1.6W
Transition Frequency(fT):
140MHz
Type:
PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FZT753TA
Package:
SOT-223
Product Description
Product Overview
The FZT753 is a 100V PNP high-performance transistor in a SOT223 package. It offers a high continuous collector current of -2A and a peak pulse current of -6A, with a low saturation voltage of less than -300mV at -1A. This device is complementary to the FZT653 NPN type and is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. It is also a "Green" device, being lead-free, halogen-free, and antimony-free.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223
- Certifications: AEC-Q101, RoHS Compliant, "Green" Device
- Material: Molded Plastic ("Green" Molding Compound)
- Finish: Matte Tin Plated Leads
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | -120 | V | |||
| Collector-Emitter Voltage | VCEO | -100 | V | |||
| Emitter-Base Voltage | VEBO | -7 | V | |||
| Continuous Collector Current | IC | -2 | A | @TA = +25C | ||
| Peak Pulse Current | ICM | -6 | A | @TA = +25C | ||
| Electrical Characteristics | ||||||
| Collector-Base Breakdown Voltage | BVCBO | -120 | V | IC = -100A | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -100 | V | IC = -1mA | ||
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A | ||
| Collector Cut-Off Current | ICBO | <1 | -100 | nA | VCB = -100V | |
| Collector Cut-Off Current | ICBO | -10 | A | VCB = -100V, TA = +125C | ||
| Emitter Cut-Off Current | IEBO | <1 | -100 | nA | VEB = -5.6V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.17 | -0.30 | V | IC = -1A, IB = -100mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.30 | -0.50 | V | IC = -2A, IB = -200mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.90 | -1.25 | V | IC = -1A, IB = -100mA | |
| Base-Emitter Turn-On Voltage | VBE(on) | -0.80 | -1.00 | V | IC = -1A, VCE = -2V | |
| DC Current Gain | hFE | 70 | 200 | IC = -50mA, VCE = -2V | ||
| DC Current Gain | hFE | 100 | 200 | 300 | IC = -500mA, VCE = -2V | |
| DC Current Gain | hFE | 55 | 170 | IC = -1A, VCE = -2V | ||
| DC Current Gain | hFE | 25 | 55 | IC = -2A, VCE = -2V | ||
| Current Gain-Bandwidth Product | fT | 100 | 140 | MHz | VCE = -5V, IC = -100mA, f = 100MHz | |
| Turn-On Time | ton | 40 | ns | VCC = -10V, IC = -500mA, IB1 = -IB2 = -50mA | ||
| Turn-Off Time | toff | 600 | ns | |||
| Output Capacitance | Cobo | 30 | pF | VCB = -10V, f = 1MHz | ||
2304140030_DIODES-FZT753TA_C85794.pdf
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