N channel MOSFET ChipNobo SI2302CDS T1 GE3 CN SOT23 package for general purpose electronic equipment
Key Attributes
Model Number:
SI2302CDS-T1-GE3-CN
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.5A
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
780mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
26pF
Output Capacitance(Coss):
34pF
Input Capacitance(Ciss):
220pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3.6nC@4.5V
Mfr. Part #:
SI2302CDS-T1-GE3-CN
Package:
SOT-23
Product Description
Product Overview
The SI2302CDS-T1-GE3-CN is a SOT-23 package component designed for use in residential and commercial equipment. It is a N-channel MOSFET with specific electrical characteristics and absolute maximum ratings suitable for various electronic applications. This product is intended for general-purpose use and is not designed for sensitive items or specialized equipment in areas with sanctions.
Product Attributes
- Brand: ChipNobo
- Product Marking: SI2302CDS-T1-GE3-CN=A2SHB
- Package: SOT-23
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
Absolute Maximum Ratings
| Symbol | Rating | Unit | Description |
|---|---|---|---|
| BVDSS | 20 | V | Drain-Source Voltage |
| VGS | +10 | V | Gate-Source Voltage |
| ID (at TA = 25C) | 3.5 | A | Drain Current (continuous) |
| IDM | 10 | A | Drain Current (pulsed) |
| PD (at TA = 25C) | 700 | mW | Total Device Dissipation |
| RJA | 178 | /W | Thermal Resistance Junction-Ambient |
| TJ, Tstg | -55~150 | Junction/Storage Temperature |
Electrical Characteristics (TA=25 unless otherwise noted)
| Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|
| BVDSS (ID =250uA,VGS=0V) | 20 | V | Drain-Source Breakdown Voltage | ||
| VGS(th) (ID =250uA,VGS= VDS) | 0.55 | 0.78 | 1.1 | V | Gate Threshold Voltage |
| IDSS (VGS=0V, VDS= 20V) | 1 | uA | Zero Gate Voltage Drain Current | ||
| IGSS (VGS=+10V, VDS=0V) | +100 | nA | Gate Body Leakage | ||
| RDS(ON) (ID=3A,VGS=4.5V) (ID=2A,VGS=2.5V) | 40 52 | 55 80 | m | Static Drain-Source On-State Resistance | |
| VSD (ISD=3A,VGS=0V) | 1.2 | V | Diode Forward Voltage Drop | ||
| CISS (VGS=0V, VDS=10V,f=1MHz) | 220 | pF | Input Capacitance | ||
| COSS (VGS=0V, VDS=10V,f=1MHz) | 34 | pF | Common Source Output Capacitance | ||
| CRSS (VGS=0V, VDS=10V,f=1MHz) | 26 | pF | Reverse Transfer Capacitance | ||
| Qg (VDS=10V, ID=3A, VGS=4.5V) | 3.6 | nC | Total Gate Charge | ||
| Qgs (VDS=10V, ID=3A, VGS=4.5V) | 0.9 | nC | Gate Source Charge | ||
| Qgd (VDS=10V, ID=3A, VGS=4.5V) | 0.8 | nC | Gate Drain Charge | ||
| td(on) (VDS=10V ID=3A, RGEN=3,VGS=4.5V) | 8 | ns | Turn-ON Delay Time | ||
| tr (VDS=10V ID=3A, RGEN=3,VGS=4.5V) | 58 | ns | Turn-ON Rise Time | ||
| td(off) (VDS=10V ID=3A, RGEN=3,VGS=4.5V) | 15 | ns | Turn-OFF Delay Time | ||
| tf (VDS=10V ID=3A, RGEN=3,VGS=4.5V) | 53 | ns | Turn-OFF Fall Time |
Dimension (SOT-23)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.050 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.900 | 1.00 | 0.035 | 0.039 |
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.500 | 0.600 | 0.020 | 0.024 |
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 | |
Additional Information
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-SI2302CDS-T1-GE3-CN_C42436846.pdf
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