SOT23 Package PNP Transistor Comchip AMMBT4403-HF RoHS Halogen Free UL94 V0 Flammability

Key Attributes
Model Number: AMMBT4403-HF
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
AMMBT4403-HF
Package:
SOT-23
Product Description

Product Overview

The AMMBT4403-HF is a RoHS compliant, Halogen Free general-purpose PNP transistor housed in a SOT-23 molded plastic package. It features tin-plated leads solderable per J-STD-002 and JESD22-B102. The epoxy meets UL-94 V-0 flammability rating, and the device has a Moisture Sensitivity Level 1. It is AEC-Q101 Qualified, offering high conductance for various applications.

Product Attributes

  • Brand: Comchip Technology CO., LTD.
  • Product Type: General Purpose Transistor
  • Polarity: PNP
  • Compliance: RoHS Device, Halogen Free
  • Flammability Rating: UL-94 V-0
  • Moisture Sensitivity Level: 1
  • Qualification: AEC-Q101 Qualified
  • Marking Code: 2T

Technical Specifications

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage -40 V
VCEO Collector-emitter voltage -40 V
VEBO Emitter-base voltage -5 V
IC Collector current-continuous -600 mA
PD Total device dissipation (at TA=25C unless otherwise noted) 300 mW
RJA Thermal resistance junction to ambient 417 K/W
TJ Junction temperature range -55 +150 C
TSTG Storage temperature range -55 +150 C
V(BR)CBO Collector-base breakdown voltage IC = -100A, IE = 0 -40 V
V(BR)CEO Collector-emitter breakdown voltage IC = -1mA, IB = 0 -40 V
V(BR)EBO Emitter-base breakdown voltage IE = -100A, IC = 0 -5 V
ICBO Collector cut-off current VCE = -35V, IE = 0 -100 nA
ICEO Collector cut-off current VCE = -35V, IB = 0 -100 nA
IEBO Base cut-off current VCE = -4V, IC = 0 -100 nA
hFE DC current gain VCE = -2V, IC = -150mA 300
VCE(sat) Collector-emitter saturation voltage IC = -500mA, IB = -50mA -0.4 V
VCE(sat) Collector-emitter saturation voltage IC = -150mA, IB = -15mA -0.75 V
VBE(sat) Base-emitter saturation voltage IC = -500mA, IB = -50mA -1.3 V
VBE(sat) Base-emitter saturation voltage IC = -150mA, IB = -15mA -0.95 V
td Delay time VCC = -3V, VEB = -2V, IC = -150mA, IB1 = -15mA 15 ns
tr Rise time VCC = -3V, IC = -150mA, IB1 = -15mA 20 ns
ts Storage time VCC = -3V, IC = -150mA, IB1 = -15mA 225 ns
tf Fall time VCC = -3V, IC = -150mA, IB1 = -15mA 30 ns
fT Transition frequency VCE = -10V, IC = -20mA, f = 100MHz 200 MHz
Case Type SOT-23
Dimensions (inches) A 0.118 0.110
B 0.079 0.071
C 0.041 0.035
D 0.004 0.000
D1 0.020 0.012
D2 0.008 0.004
E 0.100 0.089
F 0.020 0.012
Dimensions (mm) A 3.00 2.80
B 2.00 1.80
C 1.05 0.90
D 0.10 0.00
D1 0.50 0.30
D2 0.20 0.10
E 2.55 2.25
F 0.50 0.30
Packaging Reel 3,000 pcs
Reel Size 7 inch

Suggested P.C.B. PAD Layout (SOT-23):

SIZE (inch) (mm) A B C D E
0.035 0.90 0.031 (0.80) 0.037 (0.95) 2.00 (0.079) 2.90 (0.114)

Note: The pad layout is for reference purposes only.


2410121849_Comchip-AMMBT4403-HF_C5179690.pdf

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