Low RDS on N Channel MOSFET ChipNobo AO3407 CN for Switching Circuits and Power Management Solutions
Key Attributes
Model Number:
AO3407-CN
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
43mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Pd - Power Dissipation:
1.2W
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
493pF
Gate Charge(Qg):
8.2nC@10V
Mfr. Part #:
AO3407-CN
Package:
SOT-23
Product Description
Product Overview
This N-Channel MOSFET, specifically the AO3407-CN, is designed for load switching, general switching circuits, and high-speed line drivers. It features low RDS(on) at VGS=-10V, -5V logic level control, and is RoHS compliant, Pb-Free, and Halogen Free. Its power management capabilities make it suitable for a variety of electronic applications.
Product Attributes
- Brand: ChipNobo (implied by notice)
- Device Type: AO3407-CN
- Device Marking: A79T
- Package: SOT-23
- RoHS Compliant: Yes
- Pb-Free: Yes
- Halogen Free: Yes
- Logic Level Control: -5V
Technical Specifications
| Parameter | Symbol | Note or Test Condition | Value | Unit |
|---|---|---|---|---|
| Features | ||||
| Low RDS(on)@VGS=-10V | ||||
| -5V Logic Level Control | ||||
| Application | ||||
| Load Switch | ||||
| Switching Circuits | ||||
| High speed line driver | ||||
| Power Management Functions | ||||
| Characteristic Values | ||||
| Storage temperature | Tstg | -50 to +150 | C | |
| Thermal resistance, Junction-Ambient | RJA | 80 | C/W | |
| Device Type | VDS | -30 | V | |
| ID@TA=25 | ID | TA=25 | -4.2 | A |
| RDS(on)@VGS=-10V,ID=-4A | RDS(on) | Typ.Max.(Tj=25) | 4355 | m |
| Reel Size | 7 Inch | |||
| Standard Packaging Quantity (SPQ) | 3000/Reel | |||
| Minimum Packaging Quantity (MPQ) | 45000/Box | |||
| Minimum Ordering Quantity (MOQ) | 180000/Carton | |||
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | TA=25C | -4.2 | A |
| Continuous Drain Current | ID | TA=70C | -3.3 | A |
| Pulse Drain Current | IDM | Pulse width limited by maximum allowable junction temperature | -16.8 | A |
| Power Dissipation | PD | TA=25C | 1.2 | W |
| Power Dissipation | PD | TA=70C | 0.9 | W |
| Electrical Characteristic Values | ||||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V, ID=-250A | -30 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V, TA=25C | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V, TA=125C | -100 | A |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -1.2 to -2.5 | V |
| Drain-Source on-state resistance | RDS(on) | VGS=-10V, ID=-4A | 43 to 55 | m |
| Drain-Source on-state resistance | RDS(on) | VGS=-4.5V, ID=-3A | 66 to 80 | m |
| Dynamic Electrical Characteristics | ||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 493 | pF |
| Output Capacitance | Coss | 65 | pF | |
| Reverse Transfer Capacitance | Crss | 44 | pF | |
| Total Gate Charge | Qg | VDS=-15V, ID=-4A, VGS=-10V | 8.2 | nC |
| Gate-Source Charge | Qgs | 0.8 | nC | |
| Gate-Drain Charge | Qgd | 2.7 | nC | |
| Switching Characteristics | ||||
| Turn-on delay time | td(on) | VDD=-15V, ID=-1A, VGS=-10V, RG=3.3 | 7.2 | ns |
| Rise Time | tr | 4.8 | ns | |
| Turn-off delay time | Td(off) | 25 | ns | |
| Fall time | tf | 8.5 | ns | |
| Operating junction temperature | Tj | +150 | C | |
| Source-Drain Diode Characteristics | ||||
| Diode forward voltage | VSD | Tj=25, ISD=-4A, VGS=0V | -0.88 to -1.2 | V |
| Source drain current (Body Diode) | ISD | -2 | A | |
2507091655_ChipNobo-AO3407-CN_C42436825.pdf
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