Power P channel MOSFET ChipNobo SI2301CDS T1 GE3 CN with 20V Breakdown Voltage and 8A Pulsed Current
Product Overview
The SI2301CDS-T1-GE3-CN is a P-channel MOSFET designed for use in residential and commercial equipment. It offers specific electrical characteristics, including a drain-source breakdown voltage of -20V and a continuous drain current of -2.8A. This device is suitable for applications where precise control and efficient power management are required.
Product Attributes
- Brand: ChipNobo
- Product Marking: A1SHB
- Package Type: SOT-23
Technical Specifications
| Specification | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | +10 | V | |||
| Drain Current (continuous) | ID(at TC = 25C) | -2.8 | A | (TC = 25C) | ||
| Drain Current (pulsed) | IDM | -8 | A | |||
| Total Device Dissipation | PD(at TA = 25C) | 700 | mW | (TA = 25C) | ||
| Thermal Resistance Junction-Ambient | RJA | 178 | /W | |||
| Junction/Storage Temperature | TJ,Tstg | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID = -250uA, VGS=0V | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.6 | -1 | V | ID = -250uA, VGS= VDS |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS= -20V | ||
| Gate Body Leakage | IGSS | +100 | nA | VGS=+10V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 86 | 115 | m | ID= -2A, VGS= -4.5V | |
| 120 | 150 | ID= -1.5A, VGS= -2.5V | ||||
| 165 | 250 | ID= -1A, VGS= -1.8V | ||||
| Diode Forward Voltage Drop | VSD | -1.2 | V | ISD= -2A, VGS=0V | ||
| Input Capacitance | CISS | 327 | pF | VGS=0V, VDS= -10V, f=1MHz | ||
| Common Source Output Capacitance | COSS | 62 | pF | VGS=0V, VDS= -10V, f=1MHz | ||
| Reverse Transfer Capacitance | CRSS | 55 | pF | VGS=0V, VDS= -10V, f=1MHz | ||
| Total Gate Charge | Qg | 4.5 | nC | VDS= -10V, ID= -2A, VGS= -4.5V | ||
| Gate Source Charge | Qgs | 0.85 | nC | VDS= -10V, ID= -2A, VGS= -4.5V | ||
| Gate Drain Charge | Qgd | 1.4 | nC | VDS= -10V, ID= -2A, VGS= -4.5V | ||
| Turn-ON Delay Time | td(on) | 6 | ns | VDS= -10V, ID= -1A, RGEN=2.5, VGS= -4.5V | ||
| Turn-ON Rise Time | tr | 30 | ns | VDS= -10V, ID= -1A, RGEN=2.5, VGS= -4.5V | ||
| Turn-OFF Delay Time | td(off) | 45 | ns | VDS= -10V, ID= -1A, RGEN=2.5, VGS= -4.5V | ||
| Turn-OFF Fall Time | tf | 46 | ns | VDS= -10V, ID= -1A, RGEN=2.5, VGS= -4.5V | ||
| Dimension (SOT-23) | ||||||
| Dimension | Symbol | Min (mm) | Max (mm) | Min (in) | Max (in) | |
| A | 0.900 | 1.150 | 0.035 | 0.045 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 0.900 | 1.050 | 0.035 | 0.041 | ||
| b | 0.300 | 0.500 | 0.012 | 0.020 | ||
| c | 0.080 | 0.150 | 0.003 | 0.006 | ||
| D | 2.800 | 3.000 | 0.110 | 0.118 | ||
| E | 1.200 | 1.400 | 0.050 | 0.055 | ||
| E1 | 2.250 | 2.550 | 0.089 | 0.100 | ||
| e | 0.900 | 1.00 | 0.035 | 0.039 | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 | ||
| L | 0.500 | 0.600 | 0.020 | 0.024 | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 | ||
| 0 | 8 | 0 | 8 | |||
Notice
The information presented in this document is for reference only. ChipNobo reserves the right to adjust product indicators and upgrade technical parameters for product optimization and productivity improvement. ChipNobo is exempt from liability for any delay or non-delivery of information disclosure.
The product listed herein is designed for use with residential and commercial equipment and does not support sensitive items and specialized equipment in areas where sanctions exist. ChipNobo Co., Ltd or its representatives assume no responsibility or liability for any damages resulting from improper use.
For additional information, please visit http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-SI2301CDS-T1-GE3-CN_C42436845.pdf
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