power mosfet Chongqing Pingwei Tech 10N50TF designed for 10A drain current and 500V drain source voltage
Key Attributes
Model Number:
10N50TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
8.4pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.62nF@25V
Pd - Power Dissipation:
40W
Gate Charge(Qg):
32nC@400V
Mfr. Part #:
10N50TF
Package:
TO-220
Product Description
Product Overview
The 10N50TF is a N-CHANNEL Power MOSFET designed for high-performance applications. It features a 10A continuous drain current rating, 500V drain-source voltage, and a low on-state resistance of 0.75 maximum at VGS=10V/5A. Key advantages include low gate charge, low Ciss, fast switching speeds, and improved dv/dt capability. This MOSFET is 100% avalanche tested and offers enhanced reliability. It is suitable for applications requiring efficient power switching and robust performance.
Product Attributes
- Brand: Perfectway
- Model: 10N50TF
- Package: TO-220TF
- Certifications: Halogen free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 500 | V | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Continuous Drain Current | ID | 10 | A | |||
| Pulsed Drain Current (Note 1) | IDM | 40 | A | |||
| Single Pulse Avalanche Energy (Note 2) | EAS | 580 | mJ | |||
| Reverse Diode dV/dt (Note 3) | dv/dt | 5 | V/ns | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 260 | ||||
| Mounting Torque (6-32 or M3 screw) | 1.1 | Nm | ||||
| Thermal resistance, Channel to Case | Rth(ch-c) | 3.13 | /W | |||
| Thermal resistance, Channel to Ambient | Rth(ch-a) | 62.5 | /W | |||
| Maximum Power Dissipation (TC=25) | PD | 40 | W | |||
| Electrical Characteristics (Tc=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 500 | - | - | V |
| Breakdown Temperature Coefficient | BVDSS /TJ | Reference to 25, ID=250uA | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V, VGS=0V | - | - | 1 | uA |
| Gate-Body Leakage Current, Forward | IGSSF | VGS=30V, VDS=0V | - | - | 100 | nA |
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | - | - | -100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 2 | - | 4 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=5A | - | 0.5 | 0.75 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 1620 | - | pF |
| Output Capacitance | Coss | - | 154 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 8.4 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=250V, ID=10A, RG=10 (Note 3, 4) | - | 26 | - | ns |
| Turn-On Rise Time | tr | - | 20 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 52 | - | ns | |
| Turn-Off Fall Time | tf | - | 21 | - | ns | |
| Total Gate Charge | Qg | VDS=400V, ID=10A, VGS=10V (Note 3, 4) | - | 32 | - | nC |
| Gate-Source Charge | Qgs | - | 7.9 | - | nC | |
| Gate-Drain Charge | Qgd | - | 12 | - | nC | |
| Drain-Source Body Diode Characteristics and Maximum Ratings | ||||||
| Continuous Diode Forward Current | IS | - | - | 10 | A | |
| Pulsed Diode Forward Current | ISM | - | - | 40 | A | |
| Diode Forward Voltage | VSD | IS=10A, VGS=0V | - | - | 1.5 | V |
| Reverse Recovery Time | trr | VGS=0V, IS=10A, dIF/dt=100A/us (Note 4) | - | 411 | - | ns |
| Reverse Recovery Charge | Qrr | - | 2.588 | - | uC | |
Package Outline Dimensions
TO-220TF
| Dim | Min | Max |
|---|---|---|
| A | .590(15.0) | .650(16.5) |
| B | .393(10.0) | .414(10.5) |
| C | .118(3.00) | .138(3.50) |
| D | .118(3.00) | .146(3.70) |
| E | .512(13.0) | .551(14.0) |
| F | .028(0.70) | .035(0.90) |
| G | .114(2.90) | .138(3.50) |
| H | .255(6.50) | .280(7.10) |
| I | .173(4.40) | .197(5.00) |
| J | .102(2.60) | .110(2.80) |
| K | .018(0.45) | .026(0.65) |
| L | .092(2.35) | .109(2.75) |
| P | .890(2.25) | .113(2.85) |
2410122028_Chongqing-Pingwei-Tech-10N50TF_C432586.pdf
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