RoHS Compliant PNP Transistor Comchip MMBT2907A-HF Halogen Free SOT23 Package General Purpose Device

Key Attributes
Model Number: MMBT2907A-HF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
MMBT2907A-HF
Package:
SOT-23
Product Description

Product Overview

The MMBT2907A-HF is a RoHS-compliant, Halogen-Free PNP general-purpose transistor designed for surface mounting. It features a molded plastic SOT-23 package with tin-plated leads, suitable for automatic insertion. The epoxy material meets UL-94 V-0 flammability rating, and the device offers high conductance and moisture sensitivity Level 1. It is ideally suited for various general-purpose applications.

Product Attributes

  • Brand: Comchip Technology CO., LTD.
  • Product Type: General Purpose Transistor
  • Polarity: PNP
  • Compliance: RoHS Device, Halogen Free
  • Flammability Rating: UL-94 V-0
  • Moisture Sensitivity Level: 1
  • Package Type: SOT-23, molded plastic
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102

Technical Specifications

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage -60 V
VCEO Collector-emitter voltage -60 V
VEBO Emitter-base voltage -5 V
IC Collector current -0.6 A
PC Collector power dissipation (at TA=25C) 300 mW
TJ Junction temperature range -55 +150 C
TSTG Storage temperature range -55 +150 C
RJA Thermal resistance from junction to ambient 417 C/W
VCBO Collector-base breakdown voltage IC = -10A, IE = 0 -60 V
VCEO Collector-emitter breakdown voltage IC = -10mA, IB = 0 -60 V
VEBO Emitter-base breakdown voltage IE = -10A, IC = 0 -5 V
ICEX Collector-emitter cut-off current VCB = -50V, IE = 0 -0.05 A
ICBO Collector-base cut-off current VCE = -30V, VEB = -0.5V -0.05 A
hFE(1) DC current gain VCE = -10V, IC = -0.1mA 300
hFE(2) DC current gain VCE = -10V, IC = -1mA 75 100
hFE(3) DC current gain VCE = -10V, IC = -10mA 100
hFE(4) DC current gain VCE = -10V, IC = -150mA 100
hFE(5) DC current gain VCE = -10V, IC = -500mA 50
fT Transition frequency VCE = -20V, IC = -50mA, f = 100MHz 200 MHz
td Delay time VCC = -30V , IC = -150mA , IB1 = -15mA 10 ns
tr Rise time VCC = -30V , IC = -150mA , IB1 = -15mA 40 ns
ts Storage time VCC = -6V , IC = -150mA , IB1 = IB2 = -15mA 80 ns
tf Fall time VCC = -6V , IC = -150mA , IB1 = IB2 = -15mA 30 ns
VBE(sat) Base-emitter saturation voltage IC = -500mA, IB = -50mA -1.6 V
VCE(sat) Collector-emitter saturation voltage IC = -500mA, IB = -50mA -0.4 V
VBE(sat) Base-emitter saturation voltage IC = -150mA, IB = -15mA -1.3 V
VCE(sat) Collector-emitter saturation voltage IC = -150mA, IB = -15mA -0.2 V
Case Type Reel Size (inch) Packaging
SOT-23 7 3,000 pcs REEL

2411200013_Comchip-MMBT2907A-HF_C20185866.pdf

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